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MMBZ18VAL/DG PDF预览

MMBZ18VAL/DG

更新时间: 2024-09-25 05:49:23
品牌 Logo 应用领域
恩智浦 - NXP 二极管
页数 文件大小 规格书
15页 79K
描述
Double ESD protection diodes for transient overvoltage suppression

MMBZ18VAL/DG 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT-23包装说明:R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.74击穿电压标称值:18 V
最大钳位电压:25 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95代码:TO-236ABJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性:UNIDIRECTIONAL
认证状态:Not Qualified最大重复峰值反向电压:14.5 V
子类别:Transient Suppressors表面贴装:YES
技术:AVALANCHE端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MMBZ18VAL/DG 数据手册

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MMBZxVAL series  
Double ESD protection diodes for transient overvoltage  
suppression  
Rev. 01 — 1 September 2008  
Product data sheet  
1. Product profile  
1.1 General description  
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common  
anode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted  
Device (SMD) plastic package. The devices are designed for ESD and transient  
overvoltage protection of up to two signal lines.  
Table 1.  
Product overview  
Type number[1]  
Package  
NXP  
Configuration  
JEDEC  
MMBZ12VAL  
MMBZ15VAL  
MMBZ18VAL  
MMBZ20VAL  
MMBZ27VAL  
MMBZ33VAL  
SOT23  
TO-236AB  
dual common anode  
[1] All types available as /DG halogen-free version.  
1.2 Features  
I Unidirectional ESD protection of  
I ESD protection up to 30 kV (contact  
two lines  
discharge)  
I Bidirectional ESD protection of one line I IEC 61000-4-2; level 4 (ESD)  
I Low diode capacitance: Cd 140 pF I IEC 61643-321  
I Rated peak pulse power: PPPM 40 W I AEC-Q101 qualified  
I Ultra low leakage current: IRM 5 nA  
1.3 Applications  
I Computers and peripherals  
I Audio and video equipment  
I Cellular handsets and accessories  
I Automotive electronic control units  
I Portable electronics  

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MMBZ18VALY是以高抗浪涌性为特点的瞬态抑制二极管,适合电子元器件的ESD保护。