Datasheet > MMBT5551

MMBT5551

更新时间： 2024-09-29 18:10:03

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	652K
描述
SOT-23

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中文翻译

获取价格

数据手册

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MMBT5551 数据手册

MMBT5551

BIPOLAR TRANSISTOR (NPN)

FEATURES

 Complementary to MMBT5401

 Ideal for medium power amplification and switching

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

180

Unit

Collector-Base Voltage

Collector-Emitter Voltage

160

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

600

°C/W

°C

300

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

416

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I =100uA I =0

V(BR)CBO

Collector-base breakdown voltage

180

160

，

V(BR)CEO

V(BR)EBO

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

，

I =1mA I =0

C B

，

I =10uA I =0

E C

I_CBO

I_EBO

h_FE1

h_FE2

h_FE3

0.05 uA

V_CB=120V, I_E=0

Emitter cut-off current

0.05 uA V_EB=4V, I_C=0

V_CE=5V, I_C=1mA

300

100

DC current gain

V_CE=5V, I_C=10mA

V_CE=5V, I_C=50mA

V_CE(sat)

0.15

0.2

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

I_C=10mA，I_B=1mA

I_C=50mA，I_B=5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

V_BE(sat)

f_T

V_CE=10V,I_C=10mA,f=100

Transition frequency

100

300 MHz

MHz

V_CE=10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

*Pulse test: Pulse width ≤300uS,duty cycle≤2.0%

CLASSIFICATION OF h_FE

Rank

Range

100-200

200-300

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

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与MMBT5551相关器件

型号	品牌	获取价格	描述	数据表
MMBT5551/S62Z	TI	获取价格	200mA, 160V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
MMBT5551_07	DIOTEC	获取价格	Surface Mount General Purpose Si-Epi-Planar Transistors
MMBT5551_08	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_1	DIODES	获取价格	NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MMBT5551_10	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_11	MCC	获取价格	NPN Plastic Encapsulate Transistor
MMBT5551_15	KEXIN	获取价格	NPN Transistors
MMBT5551_15	UTC	获取价格	HIGH VOLTAGE SWITCHING TRANSISTOR
MMBT5551_NL	FAIRCHILD	获取价格	暂无描述
MMBT5551-13	DIODES	获取价格	Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, PLASTI