Datasheet > MMBT5401

MMBT5401

更新时间： 2024-01-10 03:19:02

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
2页	355K
描述
TRANSISTOR(PNP)

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中文翻译

获取价格

技术参数
数据手册

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MMBT5401 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

MMBT5401 数据手册

MMBT5401

TRANSISTOR(PNP)

SOT-23

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

Complementary to MMBT5551

Ideal for medium power amplification and switching

MARKING: 2L

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

-160

-150

-5

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

-0.6

P_C

0.3

℃

T_j

150

T_stg

Storage Temperature

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CBO

-160

-150

-5

I_C= -100μA, I_E=0

V_(BR)CEOI_C= -1mA, I_B=0

V_(BR)EBO

I_CBO

I_E= -10μA, I_C=0

V_CB=-120 V , I_E=0

V_EB=-4V , I_C=0

-0.1

μA

Emitter cut-off current

I_EBO

h_FE1

V_CE= -5V, I_C= -1mA

V_CE= -5V, I_C=-10mA

V_CE= -5V, I_C=-50mA

100

DC current gain

h_FE2

300

h_FE3

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat) I_C=-50 mA, I_B= -5mA

V_BE(sat) I_C= -50 mA, I_B= -5mA

-0.5

-1

V_CE= -5V, I_C= -10mA

Transition frequency

100

MHz

f_T

f=30MHz

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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