Datasheet > MMBT5401-G

MMBT5401-G

更新时间： 2024-01-13 03:27:04

品牌	Logo	应用领域
上华 - COMCHIP		晶体晶体管
页数	文件大小	规格书
4页	105K
描述
General Purpose Transistor

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中文翻译

获取价格

技术参数
数据手册

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MMBT5401-G 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	compliant
风险等级：	5.61	Base Number Matches：	1

MMBT5401-G 数据手册

General Purpose Transistor

MMBT5401-G (PNP)

RoHS Device

SOT-23

Features

-Epitaxial planar die construction.

0.119(3.00)

0.110(2.80)

-Complementary NPN type available (MMBT5551-G).

-Ideal for medium power amplification and switching.

0.056(1.40)

0.047(1.20)

Diagram:

0.006(0.15)

0.002(0.05)

0.079(2.00)

0.071(1.80)

Collector

0.041(1.05)

0.035(0.90)

0.100(2.55)

0.089(2.25)

Base

0.004(0.10) max

0.008(0.20) min

0.020(0.50)

0.012(0.30)

Emitter

Dimensions in inches and (millimeter)

Marking: 2L

Maximum Ratings (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Collector-base voltage

VCBO

VCEO

VEBO

-160

-150

Collector-emitter voltage

Emitter-base voltage

-5

Collector current - continuous

Collector dissipation

-0.6

0.3

^OC

Junction and storage temperature

TJ, TSTG

-55 ~ +150

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

IC=-100μA, IE=0

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

-160

-150

-5

IC=-1mA, IB=0

IE=-10μA, IC=0

VCB=-120V, IE=0

-0.1

μA

Emitter cut-off current

VEB=-4V, IC=0

IEBO

VCE=-5V, IC=-1mA

VCE=-5V, IC=-10mA

VCE=-5V, IC=-50mA

IC=-50mA, IB=-5mA

VCE=-5V, IC=-10mA, f=30MHz

hFE(1)

100

DC current gain

hFE(2)

200

hFE(3)

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

VCE(sat)

VBE(sat)

-0.5

-1

100

Mhz

REV:B

Page 1

QW-BTR18

Comchip Technology CO., LTD.

12 3 4

中文翻译

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