Datasheet > MMBT5401_15

MMBT5401_15

更新时间： 2024-02-21 03:11:10

品牌	Logo	应用领域
科信 - KEXIN		/
页数	文件大小	规格书
2页	1170K
描述
PNP Transistors

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中文翻译

获取价格

数据手册

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MMBT5401_15 数据手册

SMD Type

Transistors

PNP Transistors

MMBT5401 ^(KMBT5401)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

High Voltage Transistors

Pb-Free Packages are Available

+0.1

-0.1

+0.05

-0.01

0.95

0.1

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

VCEO

VEBO

Rating

-160

Unit

Collector-emitter voltage

-150

Emitter-base voltage

-5

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

-0.6

300

TJ, Tstg

-55 to +150

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditions

IC = -100 A, IE = 0

Min

-160

-150

-5

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage *

Emitter-base breakdown voltage

Collector cutoff current

VCBO

VCEO

VEBO

ICBO

IC =- 1.0 mA, IB = 0

IE = -10 A, IC = 0

VCB =- 120 V, IE = 0

VEB = -4.0 V, IC = 0

IC = -1.0 mA, VCE = -5 V

IC = -10 mA, VCE = -5 V

IC = -50 mA, VCE = -5 V

-0.1

Emitter cutoff current

IEBO

100

DC current gain *

hFE

300

Collector-emitter saturation voltage *

Base-emitter saturation voltage *

VCE(sat) IC = -50 mA, IB = -5.0 mA

VBE(sat) IC = -50 mA, IB = -5.0 mA

-0.5

-1.0

Transiston frequency

VCE=-5V,IC=-10mA,f=30MHz

100

MHz

* Pulse Test: Pulse Width = 300 s, Duty Cycle=2.0%.

■ Classification of hfe(2)

Type

Range

Marking

MMBT5401

100-300

MMBT5401-L

100-200

MMBT5401-H

200-300

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