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MMBT5401D87Z PDF预览

MMBT5401D87Z

更新时间: 2024-11-20 21:20:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
14页 512K
描述
TRANSISTOR 600 mA, 150 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SO-3, BIP General Purpose Small Signal

MMBT5401D87Z 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.13最大集电极电流 (IC):0.6 A
集电极-发射极最大电压:150 V配置:SINGLE
最小直流电流增益 (hFE):50JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.225 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

MMBT5401D87Z 数据手册

 浏览型号MMBT5401D87Z的Datasheet PDF文件第2页浏览型号MMBT5401D87Z的Datasheet PDF文件第3页浏览型号MMBT5401D87Z的Datasheet PDF文件第4页浏览型号MMBT5401D87Z的Datasheet PDF文件第5页浏览型号MMBT5401D87Z的Datasheet PDF文件第6页浏览型号MMBT5401D87Z的Datasheet PDF文件第7页 
2N5401  
MMBT5401  
C
E
TO-92  
C
B
B
SOT-23  
Mark: 2L  
E
PNP General Purpose Amplifier  
This device is designed as a general purpose amplifier and switch  
for applications requiring high voltages.  
Absolute Maximum Ratings*  
TA= 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
150  
160  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
600  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
3) All voltages (V) and currents (A) are negative polarity for PNP transistors.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
2N5401  
*MMBT5401  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
350  
2.8  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
357  
Rθ  
C/W  
°
JA  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
2001 Fairchild Semiconductor Corporation  
2N5401/MMBT5401, Rev A  

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