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MMBT100 PDF预览

MMBT100

更新时间: 2024-11-20 22:51:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体放大器小信号双极晶体管光电二极管PC
页数 文件大小 规格书
3页 47K
描述
NPN General Purpose Amplifier

MMBT100 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:3.52
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1082008Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:SOT?23 (TO236)Samacsys Released Date:2019-08-15 10:15:12
Is Samacsys:N最大集电极电流 (IC):0.5 A
基于收集器的最大容量:4.5 pF集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):250 MHz
VCEsat-Max:0.2 VBase Number Matches:1

MMBT100 数据手册

 浏览型号MMBT100的Datasheet PDF文件第2页浏览型号MMBT100的Datasheet PDF文件第3页 
Discr ete P OWER & Sign a l  
Tech n ologies  
PN100  
MMBT100  
PN100A  
MMBT100A  
C
E
TO-92  
C
B
B
SOT-23  
Mark: NA / NA1  
E
NPN General Purpose Amplifier  
This device is designed for general purpose amplifier applications  
at collector currents to 300 mA. Sourced from Process 10.  
Absolute Maximum Ratings*  
TA=25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
45  
75  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
6.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
°C  
-55 to +150  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA= 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
PN100A  
*MMBT100A  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Case  
625  
5.0  
83.3  
350  
2.8  
mW  
mW/°C  
°C/W  
RθJC  
RθJA  
Thermal Resistance, Junction to Ambient  
200  
357  
°C/W  
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."  
1997 Fairchild Semiconductor Corporation  

MMBT100 替代型号

型号 品牌 替代类型 描述 数据表
BC817-40,215 NXP

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BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
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MMBT6429LT1 ONSEMI

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