Datasheet > MMBT1010LT1

MMBT1010LT1

更新时间： 2024-11-25 04:14:59

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描述
Low Saturation Voltage

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中文翻译

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MMBT1010LT1 数据手册

LowSaturationVoltage

MMBT1010LT1

MSD1010T1

PNP Silicon Driver Transistors

Part of the GreenLine^TMPortfolio of devices with energy–conserving traits.

This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in

general purpose driver applications. This device is housed in the SOT-23 and

SC–59 packages which are designed for low power surface mount applications.

• Low V _CE(sat), < 0.1 V at 50 mA

PNP GENERAL

PURPOSE DRIVER

TRANSISTORS

SURFACE MOUNT

Applications

• LCD Backlight Driver

• Annunciator Driver

• General Output Device Driver

MAXIMUM RATINGS (T _A= 25°C)

CASE 318–08, STYLE 6

SOT– 23

Rating

Symbol

V _(BR)CBO

V _(BR)CEO

V _(BR)EBO

I _C

Value

Unit

Vdc

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Vdc

5.0

Vdc

Collector Current — Continuous

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

CASE 318D –04, STYLE 1

SC– 59

Power Dissipation

P _D(1)

250

mW/°C

°C/W

_A=25 °C

1.8

Derate above 25°C

COLLECTOR

Thermal Resistance, Junction to Ambient

R _θJA

T _J

556

150

Junction Temperature

°C

Storage Temperature Range

T _stg

–55 —+150

DEVICE MARKING

MMBT1010LT1 = GLP; MSD1010T1 = GLP

BASE

EMITTER

ELECTRICAL CHARACTERISTICS

Characteristic

Symbol

Condition

Min

Max

—

Unit

Vdc

µA

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector-Base Cutoff Current

Collector-Emitter Cutoff Current

DC Current Gain

V _(BR)CEO

V _(BR)EBO

I _CBO

I _C= 10 mA, I _B= 0

I _E= 10 µA,I _E= 0

5.0

—

V _CB= 20 V, I _E= 0

0.1

100

600

0.1

0.19

1.1

I _CEO

V _CE= 10 V, I _B= 0

—

µA

h _FE1(2)

V _CE(sat)(2)

V _CE= 5 V,I _C= 100 mA

I _C= 10 mA, I _B= 1.0 mA

I _C= 50 mA, I _B= 5.0 mA

I _C= 100 mA, I _B= 10 mA

300

—

Collector-Emitter Saturation Voltage

Vdc

—

Base-Emitter Saturation Voltage

V _BE(sat)(2)

—

Vdc

(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.

(2) Pulse Test: Pulse Width 300 µs, D.C 2%.

O3–1/1

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