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MMBT1010LT1

更新时间： 2024-11-20 22:51:11
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
1页 73K
描述
Low Saturation Voltage

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中文翻译

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MMBT1010LT1 技术参数

生命周期：Contact Manufacturer包装说明：,
Reach Compliance Code：unknown风险等级：5.46
最大集电极电流 (IC)：0.1 A配置：Single
最小直流电流增益 (hFE)：300最高工作温度：150 °C
极性/信道类型：PNP最大功率耗散 (Abs)：0.25 W
子类别：Other Transistors表面贴装：YES

MMBT1010LT1 数据手册

  
LESHAN RADIO COMPANY, LTD.  
LowSaturationVoltage  
MMBT1010LT1  
MSD1010T1  
PNP Silicon Driver Transistors  
Part of the GreenLineTM Portfolio of devices with energy–conserving traits.  
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in  
general purpose driver applications. This device is housed in the SOT-23 and  
SC–59 packages which are designed for low power surface mount applications.  
• Low V CE(sat) , < 0.1 V at 50 mA  
PNP GENERAL  
PURPOSE DRIVER  
TRANSISTORS  
SURFACE MOUNT  
Applications  
• LCD Backlight Driver  
3
• Annunciator Driver  
• General Output Device Driver  
1
2
MAXIMUM RATINGS (T A = 25°C)  
CASE 318–08, STYLE 6  
Rating  
Symbol  
V (BR)CBO  
V (BR)CEO  
V (BR)EBO  
I C  
Value  
45  
Unit  
SOT– 23  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Vdc  
Vdc  
15  
3
5.0  
Vdc  
Collector Current — Continuous  
100  
mAdc  
2
THERMAL CHARACTERISTICS  
1
Characteristic  
Symbol  
Max  
Unit  
CASE 318D –04, STYLE 1  
Power Dissipation  
P D (1)  
250  
mW  
mW/°C  
°C/W  
SC– 59  
T
A =25 °C  
1.8  
Derate above 25°C  
COLLECTOR  
Thermal Resistance, Junction to Ambient  
R θJA  
T J  
556  
150  
Junction Temperature  
°C  
°C  
Storage Temperature Range  
T stg  
–55 —+150  
DEVICE MARKING  
MMBT1010LT1 = GLP; MSD1010T1 = GLP  
BASE  
EMITTER  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Condition  
Min  
15  
Max  
—
Unit  
Vdc  
Vdc  
µA  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Collector-Emitter Cutoff Current  
DC Current Gain  
V (BR)CEO  
V (BR)EBO  
I CBO  
I C = 10 mA, I B = 0  
I E = 10 µA,I E = 0  
5.0  
—
—
V CB = 20 V, I E = 0  
0.1  
100  
600  
0.1  
0.1  
0.19  
1.1  
I CEO  
V CE = 10 V, I B = 0  
—
µA  
h FE1 (2)  
V CE(sat)(2)  
V CE = 5 V,I C = 100 mA  
I C = 10 mA, I B = 1.0 mA  
I C = 50 mA, I B = 5.0 mA  
I C = 100 mA, I B = 10 mA  
I C = 100 mA, I B = 10 mA  
300  
—
—
Collector-Emitter Saturation Voltage  
Vdc  
—
Base-Emitter Saturation Voltage  
V BE(sat)(2)  
—
Vdc  
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.  
(2) Pulse Test: Pulse Width 300 µs, D.C 2%.  
<
<
O3–1/1  
1

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