Datasheet > MMBF4118

MMBF4118

更新时间： 2024-01-04 10:51:14

品牌	Logo	应用领域
安森美 - ONSEMI		开关放大器输入元件光电二极管晶体管
页数	文件大小	规格书
8页	389K
描述
N 沟道开关

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数据手册

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MMBF4118 数据手册

Thermal Characteristics⁽³⁾

Values are at T_A= 25°C unless otherwise noted.

Symbol

P_D

Parameter

Max.

225

1.8

Unit

Total Device Dissipation

Derate Above 25°C

mW/°C

°C/W

R_θJA

Thermal Resistance, Junction-to-Ambient

556

Note:

3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.

Electrical Characteristics

Values are at T_A= 25°C unless otherwise noted.

Symbol

Parameter

Conditions

Min.

Max.

Unit

Off Characteristics

V_(BR)GSSGate-Source Breakdown Voltage I_G= -1.0 μA, V_DS= 0

-40

V_GS= -20 V, V_DS= 0

-10

-25

I_GSS

Gate Reverse Current

V_GS= -20 V, V_DS= 0, T_A= 150°C

MMBF4117

-0.6

-1.0

-2.0

-1.8

-3.0

-6.0

V_GS(off)Gate-Source Cut-Off Voltage

V_DS= -10 V, I_D= 1.0 nA MMBF4118

MMBF4119

On Characteristics

MMBF4117

Zero-Gate Voltage Drain

I_DSS

V_DS= 10 V, V_GS= 0

MMBF4118

MMBF4119

240

600

μA

Current⁽⁴⁾

200

Small Signal Characteristics

MMBF4117

MMBF4118

MMBF4119

MMBF4117

MMBF4118

MMBF4119

MMBF4117

MMBF4118

MMBF4119

210

250

330

3.0

Common-Source Forward

Transconductance

V_DS= 10 V, V_GS= 0,

f = 1.0 kHz

g_fs

μmhos

100

Common-Source Output

Conductance

V_DS= 10 V, V_GS= 0,

f = 1.0 kHz

g_oss

5.0

10.0

Common-Source Forward

R_e(yfs)

V_DS= 10 V, V_GS= 0,

f = 30 MHz

Transconductance

C_iss

C_rss

Input Capacitance

V_DS= 10 V, V_GS= 0, f = 1.0 kHz

V_DS= 10 V, V_GS= 0, f = 1.0 MHz

3.0

1.5

Reverse Transfer Capacitance

Note:

4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 1.0%

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4

www.fairchildsemi.com

1 234 5 6 7 8

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