Datasheet > MMBF4118

MMBF4118

更新时间： 2024-01-02 18:58:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关放大器输入元件光电二极管晶体管
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MMBF4118 数据手册

February 2015

MMBF4117 / MMBF4118 / MMBF4119

N-Channel Switch

Description

This device is designed for low current DC and audio

applications. These devices provide excellent perfor-

mance as input stages for sub-picoamp instrumenta-

Note: Source & Drain

are interchangeable

tion or any high impedance signal sources. Sourced

from process 53.

SOT-23

Ordering Information

Part Number

MMBF4117

MMBF4118

MMBF4119

Top Mark

61A

Package

SOT-23 3L

Packing Method

Tape and Reel

61C

61E

Absolute Maximum Ratings^{(1), (2)}

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at T_A= 25°C unless otherwise noted.

Symbol

V_DG

Parameter

Value

Unit

Drain-Gate Voltage

Gate-Source Voltage

Forward Gate Current

-40

V_GS

I_GF

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

Notes:

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or

low-duty-cycle operations.

MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4

www.fairchildsemi.com

123 4 5 6 7 8

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