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MMBF4117 PDF预览

MMBF4117

更新时间: 2024-10-29 11:16:11
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
6页 208K
描述
N 沟道开关

MMBF4117 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:16 weeks风险等级:0.87
配置:SINGLEFET 技术:JUNCTION
最大反馈电容 (Crss):1.5 pFJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.225 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MMBF4117 数据手册

 浏览型号MMBF4117的Datasheet PDF文件第2页浏览型号MMBF4117的Datasheet PDF文件第3页浏览型号MMBF4117的Datasheet PDF文件第4页浏览型号MMBF4117的Datasheet PDF文件第5页浏览型号MMBF4117的Datasheet PDF文件第6页 
DATA SHEET  
www.onsemi.com  
Switch, N-Channel  
MMBF4117  
G
S
D
SOT23 (TO236)  
CASE 31808  
Description  
This device is designed for low current DC and audio applications.  
These devices provide excellent performance as input stages  
for subpicoamp instrumentation or any high impedance signal  
sources. Sourced from process 53.  
Note: Source & Drain are interchangeable.  
MARKING DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Values are at T = 25°C unless otherwise noted.  
61AMG  
A
G
Symbol  
Parameter  
DrainGate Voltage  
Value  
40  
Unit  
V
1
V
V
DG  
GS  
GF  
GateSource Voltage  
40  
V
61A  
M
G
= Specific Device Code  
= Date Code  
= Pb*Free Package  
I
Forward Gate Current  
50  
mA  
°C  
T , T  
Operating and Storage  
Temperature Range  
55 to +150  
J
STG  
ORDERING INFORMATION  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. These ratings are based on a maximum junction temperature of 150°C.  
2. These are steadystate limits. onsemi should be consulted on applications  
involving pulsed or lowdutycycle operations.  
Device  
MMBF4117  
Package  
Shipping  
3000 /  
Tape & Reel  
SOT23 3L  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
THERMAL CHARACTERISTICS  
Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Total Device Dissipation  
Value  
225  
1.8  
Unit  
mW  
P
D
Derate Above 25°C  
mW/°C  
°C/W  
R
Thermal Resistance, JunctiontoAmbient  
556  
q
JA  
3. Device mounted on FR4 PCB 1.6 inch x 1.6 inch x 0.06 inch.  
ELECTRICAL CHARACTERISTICS Values are at T = 25°C unless otherwise noted.  
A
Symbol  
Parameter  
Conditions  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
V
GateSource Breakdown Voltage  
I
= 1.0 mA, V = 0  
40  
V
pA  
nA  
V
(BR)GSS  
G
DS  
I
Gate Reverse Current  
V
V
V
= 20 V, V = 0  
10  
25  
1.8  
GSS  
GS  
GS  
DS  
DS  
= 20 V, V = 0, T = 150°C  
DS  
A
V
GateSource CutOff Voltage  
= 10 V, I = 1.0 nA  
0.6  
GS(off)  
D
ON CHARACTERISTICS  
ZeroGate Voltage Drain Current  
SMALL SIGNAL CHARACTERISTICS  
I
V
DS  
= 10 V, V = 0  
30  
90  
mA  
DSS  
GS  
g
Common Source Forward Transconductance  
CommonSource Output Conductance  
CommonSource Forward Transconductance  
Input Capacitance  
V
DS  
V
DS  
V
DS  
V
DS  
V
DS  
= 10 V, V = 0, f = 1.0 kHz  
70  
210  
3.0  
mmhos  
mmhos  
mmhos  
pF  
fs  
GS  
g
oss  
= 10 V, V = 0, f = 1.0 kHz  
GS  
R
= 10 V, V = 0, f = 30 MHz  
60  
e(yfs)  
GS  
C
= 10 V, V = 0, f = 1.0 kHz  
3.0  
1.5  
iss  
rss  
GS  
C
Reverse Transfer Capacitance  
= 10 V, V = 0, f = 1.0 MHz  
pF  
GS  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Pulse test: pulse width 300 ms, duty cycle 1.0%.  
1
Publication Order Number:  
© Semiconductor Components Industries, LLC, 1997  
MMBF4117/D  
February 2022 Rev. 2  

MMBF4117 替代型号

型号 品牌 替代类型 描述 数据表
SST4119-T1-E3 VISHAY

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