Datasheet > MMBD172SE

MMBD172SE

更新时间： 2024-12-01 05:49:19

品牌	Logo	应用领域
商升特 - SEMTECH		二极管局域网
页数	文件大小	规格书
1页	194K
描述
SILICON EPITAXIAL PLANAR DIODE

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中文翻译

获取价格

数据手册

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MMBD172SE 数据手册

MMBD172SE

SILICON EPITAXIAL PLANAR DIODE

for VHF~UHF band RF attenuator applications

Marking Code: FP

SOT-23 Plastic Package

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Reverse Voltage

Symbol

Value

Unit

V_R

I_F

Forward Current

Junction Temperature

Storage Temperature Range

T_j

125

T_s

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at I_F= 10 mA

V_F

V_R

I_R

Reverse Voltage

at I_R= 10 μA

0.1

Reverse Current

at V_R= 50 V

μA

Ω

Total Capacitance

C_T

r_s

0.25

at V_R= 50 V, f = 1 MHz

Series Resistance ¹⁾

at I_F= 10 mA, f = 100 MHz

¹⁾C_Tis measured by 3 terminal method with capacitance bridge.

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

Dated : 13/12/2006

中文翻译

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