Datasheet > MMBD2004SW_08

MMBD2004SW_08

更新时间： 2024-12-01 11:57:07

品牌	Logo	应用领域
美台 - DIODES		二极管开关
页数	文件大小	规格书
3页	113K
描述
SURFACE MOUNT SWITCHING DIODE

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MMBD2004SW_08 数据手册

MMBD2004SW

SURFACE MOUNT SWITCHING DIODE

Please click here to visit our online spice models database.

Mechanical Data

Features

•

Fast Switching Speed

•

Case: SOT-323

Case Material: Molded Plastic, "Green" Molding Compound,

Note 5. UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020D

Terminals: Finish - Matte Tin. Solderable per MIL-STD-202,

Method 208

Surface Mount Package Ideally Suited for Automated Insertion

For General Purpose Switching Applications

High Conductance

Lead Free/RoHS Compliant (Note 3)

"Green" Device (Notes 4 and 5)

•

Lead Free Plating (Matte Tin Finish annealed over Copper

leadframe)

•

Polarity: See Diagram

Marking Information: See Page 2

Ordering Information: See Page 2

Weight: 0.006 grams (approximate)

SOT-323

TOP VIEW

Internal Schematic

TOP VIEW

Maximum Ratings @T = 25°C unless otherwise specified

Characteristic

Repetitive Peak Reverse Voltage

Symbol

V_RRM

V_RWM

V_R

Value

300

Unit

Working Peak Reverse Voltage

DC Blocking Voltage

240

RMS Reverse Voltage

170

225

625

V_R(RMS)

I_F

Forward Continuous Current

Peak Repetitive Forward Current

I_FRM

4.0

1.0

Non-Repetitive Peak Forward Surge Current

@ t = 1.0μs

@ t = 1.0s

I_FSM

Thermal Characteristics

Characteristic

Power Dissipation (Note 1)

Symbol

P_D

Value

250

Unit

°C/W

°C

Thermal Resistance Junction to Ambient Air (Note 1)

Operating and Storage Temperature Range

500

R_θ

-65 to +150

T_J, T_STG

Electrical Characteristics @T = 25°C unless otherwise specified

Characteristic

Symbol

Min

Max

Unit

Test Condition

Reverse Breakdown Voltage (Note 2)

300

V_(BR)R

⎯

I_R= 100μA

I_F= 20mA

I_F= 100mA

0.87

1.0

Forward Voltage

V_F

⎯

μA

V_R= 240V

Peak Reverse Current (Note 2)

Total Capacitance, per Element

Reverse Recovery Time

100

5.0

I_R

C_T

t_rr

⎯

V_R= 240V, T_J= 150°C

V_R= 0, f = 1.0MHz

I_F= I_R= 30mA,

I_rr= 3.0mA, R_L= 100Ω

Notes:

1. Part mounted on FR-4 PC Board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration pulse test used to minimize self-heating effect.

3. No purposefully added lead.

4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.

5. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date

Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.

1 of 3

www.diodes.com

March 2008

MMBD2004SW

Document number: DS30443 Rev. 6 - 2

12 3

中文翻译

下载PDF

与MMBD2004SW_08相关器件

型号	品牌	获取价格	描述	数据表
MMBD2004SW_15	DIODES	获取价格	HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE
MMBD2004SW-7	DIODES	获取价格	Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, PLASTIC PACKAGE-3
MMBD2004SW-7-F	DIODES	获取价格	SURFACE MOUNT SWITCHING DIODE
MMBD2004SWQ-7-F	DIODES	获取价格	HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE
MMBD2004SWT	MCC	获取价格	Tape : 3K/Reel, 120K/Ctn;
MMBD2004SWT-TP	MCC	获取价格	Rectifier Diode,
MMBD2004SWT-TP-HF	MCC	获取价格	Rectifier Diode,
MMBD2005T1	MOTOROLA	获取价格	Switching Diode
MMBD202CAW	SEMTECH	获取价格	SILICON EPITAXIAL PLANAR SWITCHING DIODE
MMBD202CAW	SWST	获取价格	小信号开关二极管

与MMBD2004SW_08相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBD2004SW_08

MMBD2004SW_08 数据手册

与MMBD2004SW_08相关器件

与MMBD2004SW_08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MMBD2004SW_08

MMBD2004SW_08 数据手册

与MMBD2004SW_08相关器件

与MMBD2004SW_08相关文章

您还可以找

您在本页遇到什么问题？