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MMBD2004S-TP PDF预览

MMBD2004S-TP

更新时间: 2024-12-01 19:58:31
品牌 Logo 应用领域
美微科 - MCC 光电二极管
页数 文件大小 规格书
3页 301K
描述
Rectifier Diode, 2 Element, 0.225A, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBD2004S-TP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
风险等级:5.13配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
元件数量:2端子数量:3
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.25 W
认证状态:Not Qualified最大反向恢复时间:0.05 µs
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:10Base Number Matches:1

MMBD2004S-TP 数据手册

 浏览型号MMBD2004S-TP的Datasheet PDF文件第2页浏览型号MMBD2004S-TP的Datasheet PDF文件第3页 
M C C  
TM  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Micro Commercial Components  
MMBD2004S  
Features  
·
Halogen free available upon request by adding suffix "-HF"  
Designed for applications requiring high voltage capability  
Low Current Leakage  
Small Outline Surface Mount Package  
Lead Free Finish/Rohs Compliant ("P"Suffix designates  
250mW 300Volt  
Dual Series  
Switching Diode  
RoHS Compliant. See ordering information)  
Marking: B6D  
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisture Sensitivity Level 1  
SOT-23  
A
D
C/A  
Maximum Ratings  
Operating Temperature: -65°C to +150°C  
Storage Temperature: -65°C to +150°C  
B
C
Electrical Characteristics @ 25°C Unless Otherwise Specified  
A
C
F
E
Parameter  
Symbol  
VRM  
Limits  
Unit  
V
300  
Non-Repetitive Peak reverse voltage  
DC Blocking Voltage  
240  
VR  
V
H
G
J
K
225  
625  
4.0  
Continuous Forward Current  
Peak Repetitive Forward Current  
Forward Surge Current @t=1us  
@t=1s  
IF  
mA  
mA  
A
DIMENSIONS  
MM  
IFRM  
INCHES  
MIN  
DIM  
A
B
C
D
E
MAX  
.120  
.104  
.055  
.041  
.081  
.024  
.0039  
.044  
.007  
.020  
MIN  
2.80  
2.10  
1.20  
.89  
1.78  
.45  
.013  
.89  
MAX  
3.04  
2.64  
1.40  
1.03  
2.05  
.60  
.100  
1.12  
.180  
.51  
NOTE  
IFSM  
PD  
.110  
.083  
.047  
.035  
.070  
.018  
.0005  
.035  
.003  
.015  
1.0  
A
250  
Power Dissipation  
mW  
F
G
H
J
Parameter  
Reverse breakdown voltage  
Reverse voltage leakage current  
Forward voltage  
Symbol Test Conditons MIN MAX UNIT  
.085  
.37  
K
240  
0.1  
1
V
uA  
V
VBR  
IR  
IR=100uA  
Suggested Solder  
Pad Layout  
VR=240V  
VF  
CD  
IF=100mA  
VR=0V,f=1MHz  
.031  
.800  
5
pF  
Diode capacitance  
.035  
.900  
IF=IR=30mA,  
Trr  
Reverse recovery time  
50  
ns  
RL=100  
.079  
2.000  
inches  
mm  
.037  
.950  
.037  
.950  
www.mccsemi.com  
Revision: C  
2013/01/01  
1 of 3  

MMBD2004S-TP 替代型号

型号 品牌 替代类型 描述 数据表
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