Datasheet > MMBD2004SW

MMBD2004SW

更新时间： 2024-02-18 08:38:24

品牌	Logo	应用领域
威伦 - WILLAS		二极管
页数	文件大小	规格书
3页	461K
描述
SOT-323 Plastic-Encapsulate Diodes

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中文翻译

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数据手册

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MMBD2004SW 数据手册

WILLAS

MMBD2004SW

SOT-323 Plastic-Encapsulate Diodes

SWITCHING DIODE

SOT-323

FEATURES

CMSD2004S type is a silicon switching dual in series diode

manufactured by the epitaxial planar process, designed for

applications requiring high voltage capability. Power dissipation

Pb-Free package is available

RoHS product for packing code suffix ”G”

Halogen free product for packing code suffix “H”

Moisture Sensitivity Level 1

MARKING : B6D

Maximum Ratings @T_A=25℃

Limit

300

Parameter

Symbol

V_RM

V_R

Unit

Non-Repetitive Peak reverse voltage

DC Blocking Voltage

240

225

Peak Repetitive Current

Continuous Forward Current

Peak Repetitive Forward Current

Forward Surge Current tp=1 μs

Forward Surge Current tp=1 s

Power Dissipation

I_O

225

I_F

625

I_FRM

I_FSM

4.0

1.0

250

℃

150

Junction temperature

T_J

-55~+150

Storage temperature range

T_STG

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)

I_R

Test

conditions

Min

Max

Unit

Reverse breakdown voltage

I_R= 100μA

V_R=240V

I_F=100mA

240

Reverse voltage leakage current

Forward voltage

0.1

V_F

C_D

t_rr

Diode capacitance

V_R=0V,f=1MHz

Reveres recovery time

I_F=I_R=30mA,R_L=100Ω

2012-12

WILLAS ELECTRONIC CORP.

12 3

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