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MMBD2004S_1 PDF预览

MMBD2004S_1

更新时间: 2024-12-01 04:39:31
品牌 Logo 应用领域
美台 - DIODES 二极管开关高压
页数 文件大小 规格书
3页 75K
描述
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE

MMBD2004S_1 数据手册

 浏览型号MMBD2004S_1的Datasheet PDF文件第2页浏览型号MMBD2004S_1的Datasheet PDF文件第3页 
SPICE MODEL: MMBD2004S  
MMBD2004S  
Lead-free  
HIGH VOLTAGE SURFACE MOUNT SWITCHING DIODE  
Features  
·
·
·
·
·
·
Fast Switching Speed  
Surface Mount Package Ideally Suited for Automatic Insertion  
High Reverse Breakdown Voltage  
SOT-23  
Min  
Dual Series Configuration  
Dim  
A
B
C
D
E
Max  
0.51  
1.40  
2.50  
1.03  
0.60  
2.05  
3.00  
0.10  
1.10  
0.61  
0.180  
8°  
Lead Free/RoHS Compliant (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
A
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
0.013  
0.903  
0.45  
0.085  
0°  
B
C
Mechanical Data  
·
TOP VIEW  
Case: SOT-23  
D
G
E
·
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0  
G
H
J
H
·
·
·
Moisture Sensitivity: Level 1 per J-STD-020C  
K
M
Terminals: Solderable per MIL-STD-202, Method 208  
J
L
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
K
L
·
·
·
·
Polarity: See Diagram  
M
a
Ordering Information, See Sheet 2  
Marking: KA9 or KAE (See Page 2)  
Weight: 0.008 grams (approximate)  
All Dimensions in mm  
@ TA = 25°C unless otherwise specified  
Maximum Ratings  
Characteristic  
Symbol  
Value  
Unit  
VRRM  
Repetitive Peak Reverse Voltage  
300  
V
VRWM  
VR  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
240  
VR(RMS)  
IFM  
RMS Reverse Voltage  
170  
225  
625  
V
Forward Continuous Current (Note 2)  
Peak Repetitive Forward Current (Note 2)  
mA  
mA  
IFRM  
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms  
4.0  
1.0  
IFSM  
A
@ t = 1.0s  
Pd  
Power Dissipation (Note 2)  
350  
357  
mW  
°C/W  
°C  
RqJA  
Thermal Resistance Junction to Ambient Air (Note 2)  
Operating and Storage Temperature Range  
Tj , TSTG  
-65 to +150  
@ TA = 25°C unless otherwise specified  
Electrical Characteristics  
Characteristic  
Symbol  
Min  
Max  
Unit  
Test Condition  
V(BR)R  
IR = 100mA  
Reverse Breakdown Voltage (Note 1)  
300  
V
¾
IF = 20mA  
IF = 100mA  
0.87  
1.0  
VF  
Forward Voltage  
V
¾
VR = 240V  
nA  
IR  
CT  
trr  
Reverse Current (Note 1)  
Total Capacitance  
100  
5.0  
50  
¾
¾
¾
VR = 240V, Tj = 150°C  
mA  
VR = 0, f = 1.0MHz  
pF  
IF = IR = 30mA,  
Irr = 3.0mA, RL = 100W  
Reverse Recovery Time  
ns  
Notes:  
1. Short duration test pulse used to minimize self-heating effect.  
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website  
at http://www.diodes.com/datasheets/ap02001.pdf.  
3. No purposefully added lead.  
DS30281 Rev. 8 - 2  
1 of 3  
MMBD2004S  
www.diodes.com  
ã Diodes Incorporated  

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