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MMBD193 PDF预览

MMBD193

更新时间: 2024-12-03 14:53:31
品牌 Logo 应用领域
先科 - SWST 开关小信号开关二极管
页数 文件大小 规格书
4页 514K
描述
小信号开关二极管

MMBD193 数据手册

 浏览型号MMBD193的Datasheet PDF文件第2页浏览型号MMBD193的Datasheet PDF文件第3页浏览型号MMBD193的Datasheet PDF文件第4页 
MMBD193  
Silicon Epitaxial Planar Switching Diode  
Features  
• Small package  
3
• Low forward voltage  
• Fast reverse recovery time  
• Small total capacitance  
1. Anode 2. NC 3. Cathode  
SOT-23 Plastic Package  
1
2
Applications  
• Ultra high speed switching application  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
Value  
Unit  
V
Maximum Peak Reverse Voltage  
Reverse Voltage  
VRM  
VR  
100  
100  
V
Average Rectified Forward Current  
IF(AV)  
200  
mA  
mA  
A
Maximum Peak Forward Current  
IFM  
IFSM  
PD  
300  
Non-repetitive Peak Forward Surge Current (8.3 ms)  
2
350  
Power Dissipation  
mW  
O
Junction Temperature  
Storage Temperature Range  
Tj  
150  
C
O
Tstg  
- 55 to + 150  
C
Thermal Characteristics  
Parameter  
Symbol  
RθJA  
Unit  
/W  
Max.  
357  
Thermal Resistance from Junction to Ambient 1)  
1) Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.  
®
1 / 4  
Dated : 12/09/2023 Rev:04  

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