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MMBD1505A PDF预览

MMBD1505A

更新时间: 2024-11-30 12:21:27
品牌 Logo 应用领域
鲁光 - LGE 小信号开关二极管
页数 文件大小 规格书
3页 282K
描述
High Conductance Low Leakage Diode

MMBD1505A 技术参数

Case Style:SOT-23IF(mA):200
Maximum recurrent peak reverse voltage:200TRR(nS):-
Maximum instantaneous forward voltage:1.5@IF(uA):300
Maximum reverse current:0.01@VR:180
class:Diodes

MMBD1505A 数据手册

 浏览型号MMBD1505A的Datasheet PDF文件第2页浏览型号MMBD1505A的Datasheet PDF文件第3页 
MMBD1501A/1503A/1504A/1505A  
High Conductance Low Leakage Diode  
SOT-23  
Features  
—
Two element incorporated  
into one package.  
(Emitter-coupled transistors)  
Reduction of the mounting area and  
assembly cost by one half.  
—
Dimensions in inches and (millimeters)  
Applications  
—
For general application.  
MMBD1501A  
MMBD1503A  
MMBD1504A  
MMBD1505A  
Ordering Information  
Type No.  
Marking  
Package Code  
MMBD1501A  
MMBD1503A  
MMBD1504A  
MMBD1505A  
A11  
A13  
A14  
A15  
SOT-23  
SOT-23  
SOT-23  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Parameter  
Symbol  
Limits  
Unit  
Reverse Voltage  
VR  
200  
V
Average rectified current  
VF(AV)  
IFM  
IFSM  
Pd  
200  
600  
mA  
mA  
Forward Continuous Current  
Peak forward current (1.0s)  
(1.0m)  
1.0  
2.0  
A
Power Dissipation  
350  
mW  
/W  
Thermal resistance,Junction to ambient RθJA  
Storage temperature TSTG  
357  
-55-150  
http://www.luguang.cn  
mail:lge@luguang.cn  

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