Datasheet > MMBD1701AS62Z

MMBD1701AS62Z

更新时间： 2024-12-01 05:15:27

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	43K
描述
Rectifier Diode, 1 Element, 0.05A, 30V V(RRM), Silicon

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MMBD1701AS62Z 数据手册

MMBD1701/A / 1703/A / 1704/A / 1705/A

Connection Diagrams

1703

1701

2NC

1704

1705

MARKING

MMBD1701A 85A

MMBD1701 85

MMBD1703 87

MMBD1704 88

MMBD1705 89

MMBD1703A 87A

MMBD1704A 88A

MMBD1705A 89A

SOT-23

Small Signal Diodes

Absolute Maximum Ratings* T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

250

Storage Temperature Range

-55 to +150

T_stg

T_J

Operating Junction Temperature

150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

350

357

R_θJA

°C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Max

Units

V_R

V_F

Breakdown Voltage

I_R= 5.0

Forward Voltage

I_F= 10 µA

I_F= 100 µA

I_F= 1.0 mA

I_F= 10 mA

I_F= 20 mA

I_F= 50 mA

420

520

640

760

810

0.89

500

610

740

880

950

1.1

I_R

Reverse Current

_R= 20 V

C_T

t_rr

Total Capacitance

Reverse Recovery Time

1.0

V_R= 0, f = 1.0 MHz

I_F= I_R= 10 mA, I_RR= 1.0 mA,

R_L= 100 Ω

I_F= I_R= 10 mA, I_RR= 1.0 mA,

0.7

1.0

MMBD1701-1705

MMBD1701A-1705A

R_L= 100 Ω

MMBD1700 series, Rev. B1

2001 Fairchild Semiconductor Corporation

12 3 4

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