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MMBD1501A PDF预览

MMBD1501A

更新时间: 2024-11-28 22:46:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 二极管光电二极管PC
页数 文件大小 规格书
4页 36K
描述
High Conductance Low Leakage Diode

MMBD1501A 数据手册

 浏览型号MMBD1501A的Datasheet PDF文件第2页浏览型号MMBD1501A的Datasheet PDF文件第3页浏览型号MMBD1501A的Datasheet PDF文件第4页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBD1501/A / 1503/A / 1504/A / 1505/A  
3
CONNECTION DIAGRAMS  
3
3
1501  
1503  
3
11  
1
2
2 NC  
1
1
2
3
3
1505  
1504  
MARKING  
2
MMBD1501 11  
MMBD1503 13  
MMBD1504 14  
MMBD1505 15  
MMBD1501A A11  
MMBD1503A A13  
MMBD1504A A14  
MMBD1505A A15  
SOT-23  
1
1
2
1
2
High Conductance Low Leakage Diode  
Sourced from Process 1L.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
180  
200  
600  
700  
V
IO  
mA  
mA  
mA  
IF  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
2.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
150  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MMBD1501/A/ 1503-1505/A*  
PD  
Total Device Dissipation  
350  
2.8  
mW  
mW/ C  
°
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2  
ã 1997 Fairchild Semiconductor Corporation  

MMBD1501A 替代型号

型号 品牌 替代类型 描述 数据表
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