Datasheet > MMBD1503A

MMBD1503A

更新时间： 2023-12-06 20:01:47

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1475K
描述
SOT-23

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中文翻译

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数据手册

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MMBD1503A 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Diodes

MMBD1503A

SOT-23

FEATURES

 Low Leakage

 High Conductance

MARKING: A13

A13

A13 = Device code

Solid dot = Green molding compound device,if none.

MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )

Symbol

Parameter

Value

200

Unit

DC Blocking Voltage

V_R

Continuous Forward Current

200

I_O

Peak Forward Current

700

I_FM

I_FSM

Non-repetitive Peak Forward Surge Current @t=8.3ms

Power Dissipation

2.0

350

℃/W

℃

P_D

R_θJA

Thermal Resistance from Junction to Ambient

Operation Junction and Storage Temperature Range

357

-55~+150

T_J,T_stg

ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)

Parameter

Reverse voltage

Reverse current

Symbol

V_(BR)

I_R

Test conditions

Min

Typ

Max

Unit

I_R=5μA

200

V_R=180V

I_F=1mA

0.75

0.85

0.95

1.1

1.3

1.5

I_F=10mA

I_F=50mA

I_F=100mA

I_F=200mA

I_F=300mA

V_F

Forward voltage

Total capacitance

C_tot

V_R=0V,f=1MHz

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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MMBD1503A-TG-WS	WILLAS	获取价格	Rectifier Diode, 2 Element, 0.2A, 200V V(RRM), Silicon,
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