Datasheet > MMBD1501_11

MMBD1501_11

更新时间： 2024-11-29 10:52:51

品牌	Logo	应用领域
美微科 - MCC		二极管
页数	文件大小	规格书
4页	209K
描述
High Conductance Low Leakage Diode 350mW

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中文翻译

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MMBD1501_11 数据手册

MMBD1501

THRU

MMBD1505

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

High Conductance

Low Leakage Diode

350mW

ꢀ Low Leakage

ꢀ Surface Mount Package Ideally Suited for Automatic Insertion

ꢀ 150C Junction Temperature

ꢀ Lead Free Finish/Rohs Compliant ("P"Suffix designates

RoHS Compliant. See ordering information)

Mechanical Data

SOT-23

ꢀ Epoxy meets UL 94 V-0 flammability rating

ꢀ Moisture Sensitivity Level 1

ꢀ Polarity: See Diagram

ꢀ Weight: 0.008 grams ( approx.)

Maximum Ratings @ 25^oC Unless Otherwise Specified

Characteristic

Working Inverse Voltage

DC Forward Current

Symbol

V_IV

Value

180

Unit

I^F

i_f

600

Average Rectified Current

Recurrent Peak Forward Current

200

700

1.0

2.0

DIMENSIONS

Peak Forward Surge Current @

t=1.0s

@t=1.0ms

i_f(surge)

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

Power Dissipation

Thermal Resistance,Junction to Ambient

R_θJA

350

357

^oC/W

^oC

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

Operation & Storage Temp. Range

Tj, T^STG

-55 to +150

Note: 1) These ratings are based on a max. junction temperature of 150 degrees C

2) These are steady state limits. T he factory should be consulted on applications

involving pulsed or low duty cycle operation

Electrical Characteristics @ 25^oC Unless Otherwise Specified

.100

1.12

.180

.51

.085

.37

Suggested Solder

Pad Layout

Charateristic

Symbol Min

Max Unit

Test Cond.

Breakdown Voltage

B^V

200

IR=5.0uA

I^F=1.0mA

I_F=10mA

I^F=50mA

I^F=100mA

I^F=200mA

I_F=300mA

.031

.800

620

720

800

750 mV

850 mV

950 mV

.035

.900

Forward Voltage Drop

V^F

0.83 1.1

.079

2.000

inches

0.87

0.9

1.3

1.5

I_R

Reverse Current

-----

.037

.950

5.0

V^R=180V

.037

.950

V_{R=180V TA=150 C}

Junction Capacitance

V^R=0V, f=1.0MHz

www.mccsemi.com

1 of 4

Revision: B

2011/04/11

12 3 4

中文翻译

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与MMBD1501_11相关器件

型号	品牌	获取价格	描述	数据表
MMBD1501A	MCC	获取价格	High Conductance Low Leakage Diode 350mW
MMBD1501A	ONSEMI	获取价格	高导通，低漏二极管
MMBD1501A	SECOS	获取价格	Plastic-Encapsulated Diode
MMBD1501A	LGE	获取价格	High Conductance Low Leakage Diode
MMBD1501A	BL Galaxy Electrical	获取价格	High conductance low leakage diode
MMBD1501A	GOOD-ARK	获取价格	SURFACE MOUNT SWITCHING DIODES
MMBD1501A	FAIRCHILD	获取价格	High Conductance Low Leakage Diode
MMBD1501A	CJ	获取价格	SOT-23
MMBD1501A	WON-TOP	获取价格	SMD
MMBD1501A	BL Galaxy Electrical	获取价格	0.2A,200V,Surface Mount Small Signal Switching Diodes

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