5秒后页面跳转
MMBD1401 PDF预览

MMBD1401

更新时间: 2024-10-27 22:46:07
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 整流二极管光电二极管高压PC
页数 文件大小 规格书
5页 41K
描述
High Voltage General Purpose Diode

MMBD1401 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:2.9
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:1798474Samacsys Pin Count:3
Samacsys Part Category:DiodeSamacsys Package Category:SOT23 (3-Pin)
Samacsys Footprint Name:sot-23-Samacsys Released Date:2020-04-21 03:14:40
Is Samacsys:N配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:200 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MMBD1401 数据手册

 浏览型号MMBD1401的Datasheet PDF文件第2页浏览型号MMBD1401的Datasheet PDF文件第3页浏览型号MMBD1401的Datasheet PDF文件第4页浏览型号MMBD1401的Datasheet PDF文件第5页 
Discr ete P OWER & Sign a l  
Tech n ologies  
MMBD1401 / 1403 / 1404 / 1405  
CONNECTION DIAGRAMS  
3
3
3
1401  
1403  
3
29  
2 NC  
1
1
2
1
2
3
3
1405  
1404  
2
MARKING  
SOT-23  
1
MMBD1401 29  
MMBD1403 32  
MMBD1404 33  
MMBD1405 34  
1
2
1
2
High Voltage General Purpose Diode  
Sourced from Process 1H.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
WIV  
Working Inverse Voltage  
Average Rectified Current  
DC Forward Current  
175  
200  
600  
700  
V
IO  
mA  
mA  
mA  
IF  
Recurrent Peak Forward Current  
if  
Peak Forward Surge Current  
Pulse width = 1.0 second  
if(surge)  
1.0  
2.0  
A
A
Pulse width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
C
°
Tstg  
TJ  
Operating Junction Temperature  
150  
C
°
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
MMBD1401/1403/1404/1405*  
PD  
Total Device Dissipation  
350  
2.8  
mW  
mW/ C  
°
Derate above 25 C  
°
Thermal Resistance, Junction to Ambient  
357  
Rθ  
C/W  
°
JA  
*Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2  
ã 1997 Fairchild Semiconductor Corporation  

MMBD1401 替代型号

型号 品牌 替代类型 描述 数据表
MMBD1401A FAIRCHILD

类似代替

High Voltage General Purpose Diode
BAS21 FAIRCHILD

类似代替

General Purpose High Voltage Diode

与MMBD1401相关器件

型号 品牌 获取价格 描述 数据表
MMBD1401_02 FAIRCHILD

获取价格

Small Signal Diodes
MMBD1401_NL FAIRCHILD

获取价格

Rectifier Diode, Schottky, 1 Element, 0.2A, 200V V(RRM), Silicon, LEAD FREE, DO-35
MMBD1401A FAIRCHILD

获取价格

High Voltage General Purpose Diode
MMBD1401A ONSEMI

获取价格

小信号二极管
MMBD1401AD87Z FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 0.2A, Silicon
MMBD1401ALT1G ONSEMI

获取价格

250 V Switching Diode
MMBD1401AS62Z FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 0.2A, Silicon
MMBD1401D87Z TI

获取价格

0.2A, SILICON, SIGNAL DIODE, TO-236AB
MMBD1401D87Z FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 0.2A, 200V V(RRM), Silicon
MMBD1401-F40 FAIRCHILD

获取价格

Rectifier Diode, 1 Element, 0.2A, 175V V(RRM),