Datasheet > MMBD1401-TP

MMBD1401-TP

更新时间： 2024-09-22 09:20:43

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
3页	97K
描述
Rectifier Diode, 1 Element, 0.2A, Silicon, SOT-23, 3 PIN

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中文翻译

获取价格

数据手册

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MMBD1401-TP 数据手册

MMBD1401

MMBD1403

MMBD1404

MMBD1405

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

ꢀ

)HDWXUHVꢀ

•

High Voltage

General Purpose

Diodeꢀ

Case Material:Molded Plastic. UL Flammability

Classificatio Rating 94-0 and MSL Rating 1

Low Current Leakage

•

CONNECTION DIAGRAMS

High Reverse Voltage

1401

1403

2 NC

SOT-23

1405

1404

MARKING

MMBD1401 29 MMBD1404 33

MMBD1403 32 MMBD1405 34

0D[LPXPꢀ5DWLQJVꢀ

•

Operating Temperature: -55°C to +150°C

Storage Temperature: -55°C to +150°C

Maximum Thermal Resistance; 357°C/W Junction To Ambient

Working Inverse Voltage

Average Rectified Current

DC Forward Current

Recurrent Peak Forward Current

Non-repetitive Peak Forward

Surge Current

Pulse width = 1.0second

Pulse width = 1.0 microsecond

Total Device Power Dissipation

Derate above 25

W_IV

I_F(AV)

I_FM

175

200

600

700

DIMENSIONS

INCHES

MIN

DIM

MAX

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

NOTE

I_FRM

.110

.083

.047

.035

.070

.018

.0005

.035

.003

.015

I_FSM

P_D

1.0

2.0

350

2.8

mW/

.100

1.12

.180

.51

.085

.37

Suggested Solder

Pad Layout

Parameter

Symbol

Min

Max

Test Condition

I_R=100 A

I_F=10mA

I_F=50mA

I_F=200mA

I_F=300mA

Breakdown Voltage

V_R

200V

.031

.800

850mV

950mV

1.3V

Instantaneous

Reverse Current

760 mV

.035

.900

V_FM

1.5V

.079

2.000

inches

Maximum

Instantaneous

Reverse Current

40nA

100nA

V_R=120V

V_R=175V

I_R

Measured at

1.0MHz, V_R=0V

Junction Capacitance

C_O

2.0pF

50nS

.037

.950

I_F=I_R=30mA

Reverse Recovery

Time

.037

.950

T_rr

I_RR=1.0mA

R_L=100 OHM

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Revision: 5

2008/01/01

12 3

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