Datasheet > MMBD1404S62Z

MMBD1404S62Z

更新时间： 2024-11-30 03:06:51

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
2页	29K
描述
Rectifier Diode, 2 Element, 0.2A, 200V V(RRM), Silicon

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数据手册

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MMBD1404S62Z 数据手册

MMBD1401 / 1403 / 1404 / 1405

Connection Diagrams

1403

1401

2NC

1404

1405

MARKING

MMBD1401 29

MMBD1404 35

MMBD1403 32

MMBD1405 34

SOT-23

Small Signal Diodes

Absolute Maximum Ratings*

T_A= 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_RRM

I_F(AV)

I_FSM

Maximum Repetitive Reverse Voltage

200

Average Rectified Forward Current

Non-repetitive Peak Forward Surge Current

Pulse Width = 1.0 second

1.0

2.0

Pulse Width = 1.0 microsecond

Storage Temperature Range

-55 to +150

°C

T_stg

T_J

Operating Junction Temperature

150

°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

Symbol

Parameter

Value

Units

P_D

Power Dissipation

Thermal Resistance, Junction to Ambient

350

357

R_θJA

°C/W

Electrical Characteristics T_A= 25°C unless otherwise noted

Test Conditions

Min

Symbol

Parameter

Max

Units

V_R

V_F

Breakdown Voltage

200

I_R= 100 µA

Forward Voltage

I_F= 10 mA

I_F= 50 mA

I_F= 200 mA

I_F= 300 mA

V_R= 120 V

V_R= 175 V

800

920

1.0

1.1

100

2.0

760

I_R

Reverse Current

C_T

t_rr

Total Capacitance

V_R= 0, f = 1.0 MHz

Reverse Recovery Time

I_F= I_R= 30 mA, I_RR= 3.0 mA,

R = 100

Ω

MMBD1400 series, Rev.

2001 Fairchild Semiconductor Corporation

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