5秒后页面跳转
MMBD1401_NL PDF预览

MMBD1401_NL

更新时间: 2024-01-13 16:48:46
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 光电二极管
页数 文件大小 规格书
2页 56K
描述
Rectifier Diode, Schottky, 1 Element, 0.2A, 200V V(RRM), Silicon, LEAD FREE, DO-35

MMBD1401_NL 技术参数

生命周期:Obsolete零件包装代码:DO-35
包装说明:R-PDSO-G3针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.69
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.35 W认证状态:Not Qualified
最大重复峰值反向电压:200 V最大反向恢复时间:0.05 µs
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUALBase Number Matches:1

MMBD1401_NL 数据手册

 浏览型号MMBD1401_NL的Datasheet PDF文件第2页 
MMBD1401 / 1403 / 1404 / 1405  
Connection Diagrams  
3
3
1403  
3
3
1401  
29  
1
2NC  
1
1
2
2
3
3
1
1404  
1405  
2
1
MARKING  
MMBD1401 29  
MMBD1404 33  
MMBD1403 32  
MMBD1405 34  
SOT-23  
1
2
2
Small Signal Diodes  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VRRM  
IF(AV)  
IFSM  
Maximum Repetitive Reverse Voltage  
200  
200  
V
Average Rectified Forward Current  
mA  
Non-repetitive Peak Forward Surge Current  
Pulse Width = 1.0 second  
1.0  
2.0  
A
A
Pulse Width = 1.0 microsecond  
Storage Temperature Range  
-55 to +150  
°C  
Tstg  
TJ  
Operating Junction Temperature  
150  
°C  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
Symbol  
Parameter  
Value  
Units  
PD  
Power Dissipation  
Thermal Resistance, Junction to Ambient  
350  
357  
mW  
RθJA  
°C/W  
Electrical Characteristics TA = 25°C unless otherwise noted  
Test Conditions  
Min  
Symbol  
Parameter  
Max  
Units  
VR  
VF  
Breakdown Voltage  
V
200  
IR = 100 µA  
Forward Voltage  
IF = 10 mA  
IF = 50 mA  
IF = 200 mA  
IF = 300 mA  
VR = 120 V  
VR = 175 V  
800  
920  
1.0  
1.1  
40  
100  
2.0  
mV  
mV  
V
760  
V
IR  
Reverse Current  
nA  
nA  
pF  
CT  
trr  
Total Capacitance  
VR = 0, f = 1.0 MHz  
Reverse Recovery Time  
IF = IR = 30 mA, IRR = 3.0 mA,  
50  
ns  
R = 100  
L
MMBD1400 series, Rev. C1  
2002 Fairchild Semiconductor Corporation  

与MMBD1401_NL相关器件

型号 品牌 描述 获取价格 数据表
MMBD1401A FAIRCHILD High Voltage General Purpose Diode

获取价格

MMBD1401A ONSEMI 小信号二极管

获取价格

MMBD1401AD87Z FAIRCHILD Rectifier Diode, 1 Element, 0.2A, Silicon

获取价格

MMBD1401ALT1G ONSEMI 250 V Switching Diode

获取价格

MMBD1401AS62Z FAIRCHILD Rectifier Diode, 1 Element, 0.2A, Silicon

获取价格

MMBD1401D87Z TI 0.2A, SILICON, SIGNAL DIODE, TO-236AB

获取价格