Datasheet > MLN1027S_07

MLN1027S_07

更新时间： 2025-08-19 10:53:47

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN1027S_07 数据手册

MLN1027S

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MLN1027S is Designed for

PACKAGE STYLE .280 4L STUD

Class A, Linear Applications up to 1.0 GHz.

45°

FEATURES:

• Class A Operation

• P_G= 9.0 dB at 0.5 W/1.0 GHz

• Omnigold™ Metalization System

MAXIMUM RATINGS

0.250 A

40 V

I_C

#8-32 UNC

V_CBO

V_CEO

V_EBO

P_DISS

T_J

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

1.010 / 25.65

.220 / 5.59

.270 / 6.86

.003 / 0.08

.117 / 2.97

1.055 / 26.80

.230 /5.84

.285 / 7.24

.007 / 0.18

.137 / 3.48

28 V

3.5 V

.572 / 14.53

.130 / 3.30

7.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

25 °C/W

.245 / 6.22

.255 / 6.48

.640 / 16.26

.175 / 4.45

.275 / 6.99

.217 / 5.51

.285 / 7.24

T_STG

θ_JC

ORDER CODE: ASI10619

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_E= 1.0 mA

BV_CEO

BV_EBO

I_CBO

3.5

_CB= 24 V

_CE= 5.0 V

0.5

---

h_FE

I_C= 100 mA

I_CQ= 100 mA

120

C_OB

P_G

V_CB= 28 V

f = 1.0 MHz

f = 1.0 GHz

3.5

V_CE= 20 V

9.0

P_OUT= 0.5 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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