Datasheet > MLN1030SL_07

MLN1030SL_07

更新时间： 2024-09-29 10:53:47

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	17K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN1030SL_07 数据手册

MLN1030SL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MLN1030SL is Designed for

PACKAGE STYLE .280 4L PILL

Class A Linear Applications up to 1.0 GHz.

FEATURES:

• Class A Operation

• P_G= 9.0 dB at 1.0 W/1.0 GHz

• Omnigold™ Metalization System

ØB

ØC

MAXIMUM RATINGS

0.250 A

40 V

I_C

V_CBO

V_CEO

V_EBO

P_DISS

T_J

28 V

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

3.5 V

.220 / 5.59

.230 / 5.84

1.055 / 26.80

.285 / 7.24

.006 / 0.15

.060 . 1.52

.130 / 3.30

7.0 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

20 °^OC/W

.275 / 6.99

.004 / 0.10

.050 / 1.27

.118 / 3.00

T_STG

θ_JC

ORDER CODE: ASI10624

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_E= 1.0 mA

BV_CEO

BV_EBO

I_CBO

3.5

_CB= 24 V

_CE= 5.0 V

0.5

---

I_C= 100 mA

I_CQ= 150 mA

120

h_FE

V_CB= 28 V

f = 1.0 MHz

f = 1.0 GHz

5.0

C_OB

P_G

V_CE= 20 V

9.0

P_OUT= 1.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

REV. B

1/1

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