Datasheet > MLN1033F

MLN1033F

更新时间： 2024-09-28 22:30:03

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	21K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN1033F 数据手册

MLN1033F

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

PACKAGE STYLE .250 2L FLG

The ASI MLN1033F is Designed for

ØD

.060 x 45°

CHAMFER

FEATURES:

· Omnigold™ Metalization System

MAXIMUM RATINGS

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

0.5 A

40 V

I_C

.028 / 0.71

.740 / 18.80

.245 / 6.22

.128 / 3.25

.032 / 0.81

V_CBO

V_CES

V_EBO

P_DISS

T_J

.255 / 6.48

.132 / 3.35

.125 / 3.18

.117 / 2.97

25 V

.110 / 2.79

.117 / 2.97

.560 / 14.22

.790 / 20.07

.225 / 5.72

.165 / 4.19

.003 / 0.08

.058 / 1.47

.119 / 3.02

.149 / 3.78

.570 / 14.48

.810 / 20.57

.235 / 5.97

.185 / 4.70

.007 / 0.18

.068 / 1.73

.135 / 3.43

.187 / 4.75

3.5 V

20.6 W @ T_C= 25 ^OC

-65 ^OC to +200 ^OC

-65 ^OC to +150 ^OC

17 ^OC/W

T_STG

q_JC

ORDER CODE: ASI10626

CHARACTERISTICS T_C= 25 ^OC

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 2 mA

I_C= 5 mA

I_E= 2 mA

V_CE= 5.0 V

3.5

BV_CEO

BV_EBO

h_FE

I_C= 400 mA

I_CQ= 220 mA

150

---

V_CE= 18 V

f = 1.0 GHz

P_G

P_OUT= 2.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

7525 ETHEL AVENUE · NORTH HOLLYWOOD, CA 91605 · (818) 982-1200 · FAX (818) 765-3004

Specifications are subject to change without notice.

REV. A

1/1

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