Datasheet > MLN1030SS_07

MLN1030SS_07

更新时间： 2024-01-05 18:42:51

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN1030SS_07 数据手册

MLN1030SS

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:

The ASI MLN1030SS is Designed

for Class A Linear Applications up

to 1.0 GHz.

PACKAGE STYLE .205 4L STUD

FEATURES:

• Class A Operation

• P_G= 10 dB at 1.0 W/1.0 GHz

• Omnigold™ Metalization System

#8-32UNC

MAXIMUM RATINGS

10 A

60 V

I_C

V_CB

V_CE

P_DISS

T_J

MINIMUM

MAXIMUM

inches mm

DIM

inches

.976 / 24.800

.028 / 0.700

1.000 / 25.4000

.031 / 0.800

35 V

.138 / 3.500

140 W @ T_C= 25 °C

-65 °C to +200 °C

-65 °C to +150 °C

20 °C/W

.161 / 4.100

.098 / 2.500

.200 / 5.100

.004 / 0.100

.425 / 10.800

.200 / 5.100

.196 / 5.000

.110 / 2.800

.208 / 5.300

.006 / 0.150

.465 / 11.800

2.05 / 5.200

T_STG

θ_JC

ORDER CODE: ASI10625

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CEO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 50 mA

I_E= 10 mA

V_E= 28 V

BV_CER

BV_EBO

I_CES

R_BE= 10 Ω

4.0

5.0

---

_CE= 5.0 V

I_C= 1.0 A

100

h_FE

V_CB= 28 V

V_CE= 20 V

f = 1.0 MHz

f = 1.0 GHz

5.0

C_ob

P_GE

I_CQ= 150 mA

_OUT= 1.0 W

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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