Datasheet > MLN1030F_07

MLN1030F_07

更新时间： 2024-09-29 10:53:47

品牌	Logo	应用领域
ASI		晶体晶体管射频
页数	文件大小	规格书
1页	18K
描述
NPN SILICON RF POWER TRANSISTOR

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MLN1030F_07 数据手册

MLN1030F

NPN SILICON RF POWER TRANSISTOR

PACKAGE STYLE .250 2L FLG

DESCRIPTION:

ØD

The ASI MLN1030F is Designed for

Class A, Linear Applications up to 1.0 GHz.

.060 x 45°

CHAMFER

FEATURES:

• Class A Operation

• P_G= 12 dB at 1.0 W/1.0 GHz

• Omnigold™ Metalization System

MINIMUM

inches / mm

MAXIMUM

inches / mm

DIM

.028 / 0.71

.740 / 18.80

.245 / 6.22

.128 / 3.25

.032 / 0.81

MAXIMUM RATINGS

.255 / 6.48

.132 / 3.35

500 mA

20 V

I_C

V_CE

P_DISS

T_J

.125 / 3.18

.117 / 2.97

.110 / 2.79

.117 / 2.97

.560 / 14.22

.790 / 20.07

.225 / 5.72

.165 / 4.19

.003 / 0.08

.058 / 1.47

.119 / 3.02

.149 / 3.78

.570 / 14.48

.810 / 20.57

.235 / 5.97

.185 / 4.70

.007 / 0.18

.068 / 1.73

.135 / 3.43

.187 / 4.75

--- W

-65 °C to +200 °C

20 °C/W

T_STG

θ_JC

ORDER CODE: ASI10622

CHARACTERISTICS ^T_C= 25 °C

SYMBOL

BV_CBO

NONETEST CONDITIONS

MINIMUM TYPICAL MAXIMUM UNITS

I_C= 1.0 mA

I_C= 5.0 mA

I_E= 1.0 mA

BV_CEO

BV_EBO

I_CEO

3.5

_CE= 18 V

_CE= 5.0 V

1.0

---

I_C= 1.0 A

120

h_FE

V_CB= 28 V

f = 1.0 MHz

f = 1.0 GHz

5.0

C_OB

P_G

V_CE= 20 V

P_OUT= 1.0 W

I_CQ= 150 mA

A D V A N C E D S E M I C O N D U C T O R, I N C.

REV. B

1/1

7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004

Specifications are subject to change without notice.

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