MJE8503S

更新时间： 2024-11-03 13:11:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管
页数	文件大小	规格书
4页	93K
描述
5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE8503S 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.76
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	5 A
集电极-发射极最大电压：	800 V	配置：	SINGLE
最小直流电流增益 (hFE)：	7.5	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	NPN	功耗环境最大值：	80 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	6000 ns	Base Number Matches：	1

MJE8503S 数据手册

Order this document

by MJE8503A/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

NPN Bipolar Power Transistor

POWER TRANSISTORS

5.0 AMPERES

The MJE8503A transistor is designed for high voltage, high speed, power switching

in inductive circuits where fall time is critical. They are suited for line operated

switchmode applications such as:

1500 VOLTS — BV

80 WATTS

CES

•

Switching Regulators

Inverters

Solenoid and Relay Drivers

Motor Controls

Deflection Circuits

Featuring

•

1500 Volt Collector-Base Breakdown Capability

Fast Switching:

180 ns Typical Fall Times

450 ns Typical Crossover Times

1.2 µs Typical Storage Times

•

Low Collector-Emitter Leakage Current — 100 µA Max @ 1500 V

CES

CASE 221A–06

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Emitter Voltage

Symbol

Value

700

Unit

Vdc

Adc

CEO(sus)

Collector-Emitter Voltage

1500

5.0

CES

CBO

EBO

Collector-Base Voltage

Emitter-Base Voltage

Collector Current — Continuous

Collector Current — Peak (1)

5.0

Collector Current — Continuous

Collector Current — Peak

4.0

Adc

Total Power Dissipation @ T = 25°C

0.8

Watts

@ T = 100°C

Derate above 25°C

W/°C

°C

Operating and Storage Temperature Range

T , T

–65 to +125

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

1.25

275

Unit

°C/W

°C

Thermal Resistance, Junction to Case

θJC

Maximum Lead Temperature for Soldering Purposes

1/8″ from Case for 5 sec.

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle < 10%.

SWITCHMODE is a trademark of Motorola Inc.

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

下载PDF

与MJE8503S相关器件

型号	品牌	获取价格	描述	数据表
MJE8503T	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503U	MOTOROLA	获取价格	5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE8503U2	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503UA	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE8503W	MOTOROLA	获取价格	5A, 800V, NPN, Si, POWER TRANSISTOR, TO-220AB
MJE8503WD	MOTOROLA	获取价格	Power Bipolar Transistor, 5A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast
MJE9780	MOTOROLA	获取价格	PNP SILICON POWER TRANSISTOR 3.0 AMPERES 150 VOLTS
MJE9780	ONSEMI	获取价格	PNP SILICON POWER TRANSISTOR
MJE9780AF	ONSEMI	获取价格	暂无描述
MJE9780AJ	ONSEMI	获取价格	TRANSISTOR 3 A, 150 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Pu

与MJE8503S相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

28
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

27

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE8503S

MJE8503S 技术参数

MJE8503S 数据手册

与MJE8503S相关器件

与MJE8503S相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE8503S

MJE8503S 技术参数

MJE8503S 数据手册

与MJE8503S相关器件

与MJE8503S相关文章

您还可以找

您在本页遇到什么问题？