MJE9780BD

更新时间： 2024-11-03 13:11:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管功率双极晶体管放大器局域网
页数	文件大小	规格书
4页	79K
描述
3A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

MJE9780BD 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	TO-220AB	包装说明：	PLASTIC, TO-220AB, 3 PIN
针数：	3	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
风险等级：	5.85	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	3 A
集电极-发射极最大电压：	150 V	配置：	SINGLE
最小直流电流增益 (hFE)：	50	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	PNP	认证状态：	Not Qualified
表面贴装：	NO	端子面层：	TIN LEAD
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	5 MHz
Base Number Matches：	1

MJE9780BD 数据手册

Order this document

by MJE9780/D

SEMICONDUCTOR TECHNICAL DATA

*Motorola Preferred Device

The MJE9780 is designed for vertical output of 14–inch to 17–inch televisions and

CRT monitors, as well as other applications requiring a 150 volt PNP transistor.

Features:

PNP SILICON POWER

TRANSISTOR

3.0 AMPERES

150 VOLTS

•

Standard TO–220AB Package

Gain Range of 50 – 200 at 500 mAdc/10 volts

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector–Emitter Sustaining Voltage

Collector–Base Voltage

Symbol

MJE9780

150

Unit

Vdc

Adc

CEO

CBO

EBO

200

Emitter–Base Voltage

6.0

Collector Current — Continuous

Collector Current — Peak

3.0

5.0

Total Power Dissipation (T = 25°C)

Derate above 25°C

2.0

0.016

Watts

W/°C

Total Power Dissipation

Derate above 25°C

0.32

Watts

W/°C

Operating and Storage Temperature

T , T

– 55 to 150

°C

stg

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

3.12

62.5

°C/W

°C

θJC

θJA

CASE 221A–06

TO–220AB

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

260

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS*

Collector–Emitter Sustaining Voltage

(I = 50 mA, I = 0)

—

Vdc

CEO(sus)

150

—

Collector–Base Voltage

(I = 5.0 mAdc)

CBO

EBO

CBO

200

6.0

—

Emitter–Base Voltage

(I = 5.0 mAdc)

Vdc

Emitter Cutoff Current

µAdc

= 5.0 Vdc, I = 0)

Collector Cutoff Current

(V = 150 Vdc, I = 0)

µAdc

—

* Indicates Pulse Test: P.W. = 300 µsec max, Duty Cycle = 2%.

(continued)

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4

中文翻译

下载PDF

与MJE9780BD相关器件

型号	品牌	获取价格	描述	数据表
MJE9780BG	ONSEMI	获取价格	暂无描述
MJE9780BS	ONSEMI	获取价格	3A, 150V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN
MJE9780BU	ONSEMI	获取价格	暂无描述
MJE9780BV	ONSEMI	获取价格	暂无描述
MJE9780DW	ONSEMI	获取价格	暂无描述
MJEC340	MICROSEMI	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, DIE-3
MJEC350	MICROSEMI	获取价格	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, DIE-2
MJF10012	MOTOROLA	获取价格	Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-218, Plasti
MJF122	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER DARLINGTONS 5.0 A, 100 V, 30 W
MJF122	MOTOROLA	获取价格	COMPLEMENTARY SILICON POWER DARLINGTONS

与MJE9780BD相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

12
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

6
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

30
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

29

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE9780BD

MJE9780BD 技术参数

MJE9780BD 数据手册

与MJE9780BD相关器件

与MJE9780BD相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJE9780BD

MJE9780BD 技术参数

MJE9780BD 数据手册

与MJE9780BD相关器件

与MJE9780BD相关文章

您还可以找

您在本页遇到什么问题？