MJE5730S

更新时间： 2024-11-02 13:11:35

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率双极晶体管
页数	文件大小	规格书
6页	193K
描述
1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB

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技术参数
数据手册

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MJE5730S 技术参数

生命周期：	Obsolete	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.74	Is Samacsys：	N
外壳连接：	COLLECTOR	最大集电极电流 (IC)：	1 A
集电极-发射极最大电压：	300 V	配置：	SINGLE
最小直流电流增益 (hFE)：	30	JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	PNP	功耗环境最大值：	40 W
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	10 MHz	Base Number Matches：	1

MJE5730S 数据手册

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by MJE5730/D

SEMICONDUCTOR TECHNICAL DATA

. . . designed for line operated audio output amplifier, SWITCHMODE power supply

drivers and other switching applications.

1.0 AMPERE

POWER TRANSISTORS

PNP SILICON

300–350–400 VOLTS

40 WATTS

•

300 V to 400 V (Min) — V

CEO(sus)

1.0 A Rated Collector Current

Popular TO–220 Plastic Package

PNP Complements to the TIP47 thru TIP50 Series

CASE 221A–06

TO–220AB

MAXIMUM RATINGS

Rating

Symbol

MJE5730

300

MJE5731

350

MJE5731A

400

Unit

Vdc

Adc

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

CEO

300

350

400

5.0

Collector Current — Continuous

Peak

1.0

3.0

Base Current

1.0

Adc

Total Power Dissipation

@ T = 25 C

0.32

Watts

W/ C

Derate above 25 C

Total Power Dissipation

@ T = 25 C

2.0

0.016

Watts

W/ C

Derate above 25 C

Unclamped Inducting Load Energy (See Figure 10)

Operating and Storage Junction Temperature Range

T , T

stg

–65 to +150

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

C/W

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

3.125

62.5

θJC

θJA

M^Mo^oto^tor^ro^ol^laa^{, I}B^ncip^{. 1}o⁹la⁹⁵r Power Transistor Device Data

12 3 4 5 6

中文翻译

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与MJE5730S相关器件

型号	品牌	获取价格	描述	数据表
MJE5730T	MOTOROLA	获取价格	暂无描述
MJE5730U	MOTOROLA	获取价格	1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730U2	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730UA	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731	ONSEMI	获取价格	POWER TRANSISTORS PNP SILICON
MJE5731	MOTOROLA	获取价格	1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
MJE573116	MOTOROLA	获取价格	1A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE573116A	MOTOROLA	获取价格	1A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5731A	MOTOROLA	获取价格	1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
MJE5731A	ONSEMI	获取价格	POWER TRANSISTORS PNP SILICON