Datasheet > MJE5730_06

MJE5730_06

更新时间： 2024-11-02 10:55:47

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	77K
描述
High Voltage PNP Silicon Plastic Power Transistors

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中文翻译

获取价格

数据手册

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MJE5730_06 数据手册

MJE5730, MJE5731,

MJE5731A

High Voltage PNP Silicon

Plastic Power Transistors

These devices are designed for line operated audio output amplifier,

SWITCHMODEt power supply drivers and other switching

applications.

http://onsemi.com

1.0 AMPERE

POWER TRANSISTORS

PCP SILICON

300−350−400 VOLTS

50 WATTS

Features

• 300 V to 400 V (Min) − V

CEO(sus)

• 1.0 A Rated Collector Current

• Popular TO−220 Plastic Package

• PNP Complements to the TIP47 thru TIP50 Series

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJE5730

MJE5731

MJE5731A

300

350

375

Vdc

CEO

TO−220AB

CASE 221A−09

Collector−Base Voltage

MJE5730

MJE5731

MJE5731A

300

350

375

Vdc

STYLE 1

Emitter−Base Voltage

5.0

Vdc

Adc

Collector Current − Continuous

− Peak

1.0

3.0

Base Current

1.0

Adc

MARKING DIAGRAM

Total Device Dissipation @ T = 25_C

0.32

Derate above 25°C

W/_C

Total Device Dissipation @ T = 25_C

2.0

0.016

Derate above 25°C

Unclamped Inducting Load Energy

(See Figure 10)

Operating and Storage Junction

Temperature Range

T , T

−65 to +150

stg

MJE573xG

AY WW

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

3.125

62.5

Unit

_C/W

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MJE573x = Device Code

x = 0, 1, or 1A

= Pb−Free Package

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

February, 2006 − Rev. 5

MJE5730/D

12 3 4 5

中文翻译

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与MJE5730_06相关器件

型号	品牌	获取价格	描述	数据表
MJE573016	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE573016A	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730A	MOTOROLA	获取价格	1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730AF	MOTOROLA	获取价格	1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730C	MOTOROLA	获取价格	1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730D1	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730G	ONSEMI	获取价格	High Voltage PNP Silicon Plastic Power Transistors
MJE5730L	MOTOROLA	获取价格	1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730N	MOTOROLA	获取价格	Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730S	MOTOROLA	获取价格	1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB

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