5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 功率双极晶体管> MJE5730G
MJE5730G PDF预览

MJE5730G

更新时间： 2024-11-27 10:55:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
5页 77K
描述
High Voltage PNP Silicon Plastic Power Transistors

阅读下载

中文翻译

获取价格

MJE5730G 技术参数

是否无铅：不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：2 weeks风险等级：0.82
Is Samacsys：N其他特性：LEADFORM OPTIONS ARE AVAILABLE
外壳连接：COLLECTOR最大集电极电流 (IC)：1 A
集电极-发射极最大电压：300 V配置：SINGLE
最小直流电流增益 (hFE)：10JEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：260极性/信道类型：PNP
最大功率耗散 (Abs)：40 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：10 MHzBase Number Matches：1

MJE5730G 数据手册

 浏览型号MJE5730G的Datasheet PDF文件第2页浏览型号MJE5730G的Datasheet PDF文件第3页浏览型号MJE5730G的Datasheet PDF文件第4页浏览型号MJE5730G的Datasheet PDF文件第5页 
MJE5730, MJE5731,  
MJE5731A  
High Voltage PNP Silicon  
Plastic Power Transistors  
These devices are designed for line operated audio output amplifier,  
SWITCHMODEt power supply drivers and other switching  
applications.  
http://onsemi.com  
1.0 AMPERE  
POWER TRANSISTORS  
PCP SILICON  
300−350−400 VOLTS  
50 WATTS  
Features  
• 300 V to 400 V (Min) − V  
CEO(sus)  
• 1.0 A Rated Collector Current  
• Popular TO−220 Plastic Package  
• PNP Complements to the TIP47 thru TIP50 Series  
• Pb−Free Packages are Available*  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Collector−Emitter Voltage  
MJE5730  
MJE5731  
MJE5731A  
V
300  
350  
375  
Vdc  
CEO  
TO−220AB  
CASE 221A−09  
Collector−Base Voltage  
MJE5730  
MJE5731  
MJE5731A  
V
300  
350  
375  
Vdc  
CB  
EB  
1
STYLE 1  
2
3
Emitter−Base Voltage  
V
5.0  
Vdc  
Adc  
Collector Current − Continuous  
− Peak  
I
1.0  
3.0  
C
I
CM  
Base Current  
I
1.0  
Adc  
B
MARKING DIAGRAM  
Total Device Dissipation @ T = 25_C  
P
40  
0.32  
W
C
D
Derate above 25°C  
W/_C  
W
W/_C  
mJ  
Total Device Dissipation @ T = 25_C  
P
2.0  
0.016  
C
D
Derate above 25°C  
Unclamped Inducting Load Energy  
(See Figure 10)  
E
20  
Operating and Storage Junction  
Temperature Range  
T , T  
−65 to +150  
_C  
J
stg  
MJE573xG  
AY WW  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
3.125  
62.5  
Unit  
_C/W  
_C/W  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
R
q
JA  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE573x = Device Code  
x = 0, 1, or 1A  
G
A
Y
= Pb−Free Package  
= Assembly Location  
= Year  
WW  
= Work Week  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
February, 2006 − Rev. 5  
MJE5730/D  
12345

中文翻译

下载PDF

MJE5730G 替代型号

型号 品牌 替代类型 描述 数据表
MJE5730 ONSEMI

类似代替

 POWER TRANSISTORS PNP SILICON
MJE5730 MOTOROLA

功能相似

 1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS

与MJE5730G相关器件

型号 品牌 获取价格 描述 数据表
MJE5730L MOTOROLA

获取价格

 		1 A, 300 V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730N MOTOROLA

获取价格

 		Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730S MOTOROLA

获取价格

 		1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730T MOTOROLA

获取价格

 		暂无描述
MJE5730U MOTOROLA

获取价格

 		1A, 300V, PNP, Si, POWER TRANSISTOR, TO-220AB
MJE5730U2 MOTOROLA

获取价格

 		Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5730UA MOTOROLA

获取价格

 		Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast
MJE5731 ONSEMI

获取价格

 		POWER TRANSISTORS PNP SILICON
MJE5731 MOTOROLA

获取价格

 		1.0 AMPERE POWER TRANSISTORS PNP SILICON 300-350-400 VOLTS 40 WATTS
MJE573116 MOTOROLA

获取价格

 		1A, 350V, PNP, Si, POWER TRANSISTOR, TO-220AB

与MJE5730G相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证