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MJE15031DW PDF预览

MJE15031DW

更新时间： 2024-09-16 04:56:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
61页 408K
描述
TRANSISTOR 8 A, 150 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

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中文翻译

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MJE15031DW 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：TO-220AB包装说明：PLASTIC, TO-220AB, 3 PIN
针数：3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
风险等级：5.76外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：150 V
配置：SINGLE最小直流电流增益 (hFE)：20
JESD-30 代码：R-PSFM-T3JESD-609代码：e0
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子面层：TIN LEAD端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：30 MHz

MJE15031DW 数据手册

 浏览型号MJE15031DW的Datasheet PDF文件第2页浏览型号MJE15031DW的Datasheet PDF文件第3页浏览型号MJE15031DW的Datasheet PDF文件第4页浏览型号MJE15031DW的Datasheet PDF文件第5页浏览型号MJE15031DW的Datasheet PDF文件第6页浏览型号MJE15031DW的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as high–frequency drivers in audio amplifiers.  
•
DC Current Gain Specified to 4.0 Amperes  
h
h
= 40 (Min) @ I = 3.0 Adc  
FE  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
*Motorola Preferred Device  
•
Collector–Emitter Sustaining Voltage —  
V
V
= 120 Vdc (Min) — MJE15028, MJE15029  
= 150 Vdc (Min) — MJE15030, MJE15031  
CEO(sus)  
CEO(sus)  
8 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
•
•
High Current Gain — Bandwidth Product  
= 30 MHz (Min) @ I = 500 mAdc  
f
T
C
TO–220AB Compact Package  
120–150 VOLTS  
50 WATTS  
MAXIMUM RATINGS  
MJE15028 MJE15030  
MJE15029 MJE15031  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
120  
120  
150  
150  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
— Peak  
I
C
8.0  
16  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
50  
0.40  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θJC  
θJA  
R
62.5  
T
A
T
C
3.0 60  
2.0 40  
T
C
T
A
1.0 20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–684  
Motorola Bipolar Power Transistor Device Data  
1234567...61

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 		暂无描述
MJE15031WD MOTOROLA

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 		Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plast

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