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MJE15031DW PDF预览

MJE15031DW

更新时间: 2024-11-05 04:56:55
品牌 Logo 应用领域
安森美 - ONSEMI 局域网放大器晶体管
页数 文件大小 规格书
61页 408K
描述
TRANSISTOR 8 A, 150 V, PNP, Si, POWER TRANSISTOR, PLASTIC, TO-220AB, 3 PIN, BIP General Purpose Power

MJE15031DW 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:PLASTIC, TO-220AB, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.76外壳连接:COLLECTOR
最大集电极电流 (IC):8 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):20
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子面层:TIN LEAD端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):30 MHz

MJE15031DW 数据手册

 浏览型号MJE15031DW的Datasheet PDF文件第2页浏览型号MJE15031DW的Datasheet PDF文件第3页浏览型号MJE15031DW的Datasheet PDF文件第4页浏览型号MJE15031DW的Datasheet PDF文件第5页浏览型号MJE15031DW的Datasheet PDF文件第6页浏览型号MJE15031DW的Datasheet PDF文件第7页 
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use as high–frequency drivers in audio amplifiers.  
DC Current Gain Specified to 4.0 Amperes  
h
h
= 40 (Min) @ I = 3.0 Adc  
FE  
FE  
C
= 20 (Min) @ I = 4.0 Adc  
C
*Motorola Preferred Device  
Collector–Emitter Sustaining Voltage —  
V
V
= 120 Vdc (Min) — MJE15028, MJE15029  
= 150 Vdc (Min) — MJE15030, MJE15031  
CEO(sus)  
CEO(sus)  
8 AMPERE  
POWER TRANSISTORS  
COMPLEMENTARY  
SILICON  
High Current Gain — Bandwidth Product  
= 30 MHz (Min) @ I = 500 mAdc  
f
T
C
TO–220AB Compact Package  
120150 VOLTS  
50 WATTS  
MAXIMUM RATINGS  
MJE15028 MJE15030  
MJE15029 MJE15031  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
120  
120  
150  
150  
V
CB  
V
EB  
5.0  
Collector Current — Continuous  
— Peak  
I
C
8.0  
16  
Base Current  
I
B
2.0  
Adc  
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
50  
0.40  
Watts  
W/ C  
Total Power Dissipation @ T = 25 C  
A
Derate above 25 C  
P
D
2.0  
0.016  
Watts  
W/ C  
CASE 221A–06  
TO–220AB  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +150  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
Unit  
C/W  
C/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
R
θJC  
θJA  
R
62.5  
T
A
T
C
3.0 60  
2.0 40  
T
C
T
A
1.0 20  
0
0
0
20  
40  
60  
80  
100  
120  
140  
160  
T, TEMPERATURE (°C)  
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
3–684  
Motorola Bipolar Power Transistor Device Data  

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暂无描述
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