Datasheet > MJE15033

MJE15033

更新时间： 2024-11-04 12:20:35

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	107K
描述
isc Silicon PNP Power Transistor

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中文翻译

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技术参数
数据手册

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MJE15033 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.55
Base Number Matches：	1

MJE15033 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

MJE15033

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= -250V(Min)

·DC current gain -

: h_FE= 50 (Min) @I_C= -0.5 A

: h_FE= 10 (Min) @I_C= -2.0 A

·Complement to Type MJE15032

APPLICATIONS

·Designed for use as high–frequency drivers in audio

amplifiers.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Current-Peak

Base Current

VALUE

-250

-5

UNIT

-8

I_CM

-16

I_B

-2

Collector Power Dissipation

@T_a=25℃

Collector Power Dissipation

@T_C=25℃

P_C

T_j

Junction Temperature

Storage Temperature

150

-65~150

℃

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

℃/W

Thermal Resistance,Junction to Case

2.5

R_{th j-c}

Thermal Resistance,Junction to Ambient 62.5

R_{th j-a}

isc Website：www.iscsemi.cn

中文翻译

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