Datasheet > MJE15032

MJE15032

更新时间： 2024-11-04 10:55:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Silicon NPN Power Transistors

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MJE15032 数据手册

SavantIC Semiconductor

Product Specification

Silicon NPN Power Transistors

MJE15032

DESCRIPTION

·With TO-220C package

·Complement to type MJE15033

·High transition frequency

·DC current gain specified to 5.0 amperes

h_FE= 50 (Min) @ I_C= 0.5 Adc

_FE= 10 (Min) @ I_C= 2.0 Adc

APPLICATIONS

·Designed for use as high–frequency

drivers in audio amplifiers.

PINNING

DESCRIPTION

Base

Collector;connected to

mounting base

Emitter

ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

Open emitter

VALUE

UNIT

250

Open base

250

Open collector

I_CM

I_B

T_a=25ꢀ

T_C=25ꢀ

P_D

Total power dissipation

Junction temperature

Storage temperature

150

-65~150

ꢀ

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance ; junction to case

Thermal resistance , junction to ambient

MAX

2.5

UNIT

ꢀ/W

R_{th j-C}

R_{th j-A}

62.5

12 3

中文翻译

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MJE15032_05	ONSEMI	获取价格	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
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MJE15033	ONSEMI	获取价格	POWER TRANSISTORS COMPLEMENTARY SILICON
MJE15033	CDIL	获取价格	SILICON EPITAXIAL POWER TRANSISTORS
MJE15033	SAVANTIC	获取价格	Silicon PNP Power Transistors
MJE15033	ISC	获取价格	isc Silicon PNP Power Transistor
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