Datasheet > MJE15033

MJE15033

更新时间： 2024-11-04 10:55:47

品牌	Logo	应用领域
SAVANTIC		晶体晶体管
页数	文件大小	规格书
3页	91K
描述
Silicon PNP Power Transistors

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中文翻译

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MJE15033 数据手册

SavantIC Semiconductor

Product Specification

Silicon PNP Power Transistors

MJE15033

DESCRIPTION

·With TO-220C package

·Complement to type MJE15032

·High transition frequency

·DC Current Gain Specified to 5.0 Amperes

h_FE= 50 (Min) @ I_C=- 0.5 Adc

_FE= 10 (Min) @ I_C= -2.0 Adc

APPLICATIONS

·Designed for use as high–frequency

drivers in audio amplifiers.

PINNING

DESCRIPTION

Emitter

Collector;connected to

mounting base

Base

ABSOLUTE MAXIMUM RATINGS(Tc=25ꢀ )

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Collector current-Peak

Base current

CONDITIONS

VALUE

-250

-5

UNIT

Open emitter

Open base

Open collector

-8

I_CM

-16

I_B

-2

T_a=25ꢀ

T_C=25ꢀ

P_D

Total power dissipation

Junction temperature

Storage temperature

150

-65~150

ꢀ

T_j

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Thermal resistance ; junction to case

Thermal resistance , junction to ambient

MAX

2.5

UNIT

ꢀ/W

R_{th j-C}

R_{th j-A}

62.5

12 3

中文翻译

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MJE15033G	ONSEMI	获取价格	8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS
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MJE15034	FOSHAN	获取价格	TO-220
MJE15034_06	ONSEMI	获取价格	4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
MJE15034G	ONSEMI	获取价格	4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
MJE15035	ONSEMI	获取价格	4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS
MJE15035	FOSHAN	获取价格	TO-220
MJE15035G	ONSEMI	获取价格	4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS
MJE15036	FOSHAN	获取价格	TO-220