Datasheet > MJE15032NPN

MJE15032NPN

更新时间： 2024-11-07 01:22:27

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描述
SILICON EPITAXIAL POWER TRANSISTORS

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MJE15032NPN 数据手册

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company

SILICON EPITAXIAL POWER TRANSISTORS

MJE15032 NPN

MJE15033 PNP

TO - 220

Plastic Package

High - Frequency Drivers in Audio Amplifier

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

VALUE

UNIT

V_CBO

V_CEO

V_EBO

I_C

250

Collector- Base Voltage

Collector- Emitter Voltage

Emitter- Base Voltage

Collector Current Continuous

Peak

I_B

P_D

0.4

W/ºC

ºC

Base Current

Power Dissipation T_C=25ºC

Derate Above 25ºC

Power Dissipation T_A=25ºC

Derate Above 25ºC

P_D

0.016

- 65 to +150

T_{j, Tstg}

Operating & Storage Junction

Temperature Range

Thermal Resistance

Thermal Ambient

R_{th (j-a)}

R_{th (j-c)}

62.5

2.5

ºC/W

Junction to Case

ELECTRICAL CHARACTERISTICS (Tc=25º C unless specified otherwise)

DESCRIPTION

SYMBOL TEST CONDITION

MIN

250

TYP

MAX

UNIT

V_CEO(sus)*I_C=10mA, I_B=0

I_CBOV_CB=150V, I_E=0

I_EBOV_BE=5V, I_C=0

Collector- Emitter Sustaing Voltage

Collector Cut Off Current

Emitter Cut Off Current

DC Current Gain

h_FE*

I_C=0.5A, V_CE=5V

I_C=1.0A, V_CE=5V

I_C=2A, V_CE=5V

V_{CE(sat) *}I_C=1A, I_B=0.1A

V_{BE(on) *}I_C=1.0A, V_CE=5V

0.5

Collector Emitter Saturation Voltage

1.0

Base Emitter on Voltage

Dynamic Characteristics

f_{T **}

I_C=500mA, V_CE=10V

f_test=1MHz

MHz

Current Gain - Bandwidth Product

* Pulse Test: Pulse Width < 300ms, Duty Cycle <2 %

** f_T= Ih_fel. f_test

Page 1 of 3

Data Sheet

Continental Device India Limited

12 3

中文翻译

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