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MJE15034G

更新时间： 2024-11-06 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管
页数 文件大小 规格书
5页 74K
描述
4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS, 50 WATTS

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MJE15034G 数据手册

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MJE15034 NPN,  
MJE15035 PNP  
Preferred Device  
Complementary Silicon  
Plastic Power Transistors  
TO−220, NPN & PNP Devices  
http://onsemi.com  
Complementary silicon plastic power transistors are designed for  
use as high−frequency drivers in audio amplifiers.  
4.0 AMPERES  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
350 VOLTS, 50 WATTS  
Features  
• h = 100 (Min) @ I = 0.5 Adc  
FE  
C
= 10 (Min) @ I = 2.0 Adc  
C
• Collector−Emitter Sustaining Voltage −  
= 350 Vdc (Min) − MJE15034, MJE15035  
4
V
CEO(sus)  
• High Current Gain − Bandwidth Product  
f = 30 MHz (Min) @ I = 500 mAdc  
T
C
• TO−220AB Compact Package  
• Epoxy meets UL 94 V−0 @ 0.125 in  
TO−220AB  
CASE 221A  
STYLE 1  
• ESD Ratings: Machine Model: C  
1
Human Body Model: 3B  
• Pb−Free Packages are Available*  
2
3
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
350  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
V
350  
CB  
EB  
V
5.0  
MJE1503xG  
AYWW  
Collector Current − Continuous  
− Peak  
I
4.0  
8.0  
C
Base Current  
I
1.0  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
50  
0.40  
W
C
D
D
Derate above 25_C  
W/_C  
W
W/_C  
_C  
MJE1503x = Device Code  
x = 4 or 5  
Total Power Dissipation @ T = 25_C  
2.0  
0.016  
A
Derate above 25_C  
A
Y
= Location Code  
= Year  
Operating and Storage Junction  
Temperature Range  
T , T  
J
–65 to +150  
stg  
WW  
G
= Work Week  
= Pb−Free Package  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
2.5  
Unit  
_C/W  
_C/W  
ORDERING INFORMATION  
Thermal Resistance, Junction−to−Case  
Thermal Resistance, Junction−to−Ambient  
R
q
JC  
Device  
Package  
Shipping  
R
q
JA  
62.5  
MJE15034  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
MJE15034G  
TO−220AB  
(Pb−Free)  
MJE15035  
TO−220AB  
50 Units / Rail  
50 Units / Rail  
MJE15035G  
TO−220AB  
(Pb−Free)  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
January, 2006 − Rev. 3  
MJE15034/D  
12345

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MJE15034G 替代型号

型号 品牌 替代类型 描述 数据表
MJE15034 ONSEMI

完全替代

 4.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 350 VOLTS 50 WATTS

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