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MJE15033G PDF预览

MJE15033G

更新时间： 2024-11-04 04:15:31
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器PC局域网
页数 文件大小 规格书
6页 75K
描述
8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

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中文翻译

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MJE15033G 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：TO-220AB包装说明：ROHS COMPLIANT, PLASTIC, CASE 221A-09, 3 PIN
针数：3Reach Compliance Code：not_compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.85
Samacsys Confidence：3Samacsys Status：Released
Samacsys PartID：171059Samacsys Pin Count：3
Samacsys Part Category：Transistor BJT PNPSamacsys Package Category：Transistor Outline, Vertical
Samacsys Footprint Name：TO-220 CASE221A-09Samacsys Released Date：2015-11-03 12:30:39
Is Samacsys：N外壳连接：COLLECTOR
最大集电极电流 (IC)：8 A集电极-发射极最大电压：250 V
配置：SINGLE最小直流电流增益 (hFE)：10
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e3元件数量：1
端子数量：3最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：260
极性/信道类型：PNP最大功率耗散 (Abs)：50 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：NO端子面层：Tin (Sn)
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：30 MHz
Base Number Matches：1

MJE15033G 数据手册

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MJE15032 (NPN),  
MJE15033 (PNP)  
Preferred Devices  
Complementary Silicon  
Plastic Power Transistors  
Designed for use as high−frequency drivers in audio amplifiers.  
http://onsemi.com  
Features  
• DC Current Gain Specified to 5.0 Amperes  
8.0 AMPERES  
h
= 70 (Min) @ I = 0.5 Adc  
C
FE  
POWER TRANSISTORS  
COMPLEMENTARY SILICON  
250 VOLTS, 50 WATTS  
= 10 (Min) @ I = 2.0 Adc  
C
• Collector−Emitter Sustaining Voltage −  
= 250 Vdc (Min) − MJE15032, MJE15033  
V
CEO(sus)  
• High Current Gain − Bandwidth Product  
f = 30 MHz (Min) @ I = 500 mAdc  
T
C
MARKING  
DIAGRAM  
• TO−220AB Compact Package  
• Epoxy Meets UL 94 V−0 @ 0.125 in  
• ESD Ratings: Machine Model C  
Human Body Model 3B  
4
A
YW  
• Pb−Free Packages are Available*  
MJE1503xG  
AKA  
TO−220  
CASE 221A  
STYLE 1  
MAXIMUM RATINGS  
Rating  
Collector−Emitter Voltage  
Collector−Base Voltage  
Emitter−Base Voltage  
Symbol  
Value  
250  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
V
CEO  
1
2
V
250  
CB  
EB  
3
V
5.0  
Collector Current − Continuous  
− Peak  
I
8.0  
16  
C
MJE1503x = Specific Device Code  
x
= 2 or 3  
A
Y
W
G
= Assembly Location  
= Year  
= Work Week  
= Pb−Package  
Base Current  
I
2.0  
Adc  
B
Total Power Dissipation @ T = 25_C  
P
P
50  
0.40  
W
C
D
D
Derate above 25_C  
W/_C  
Total Power Dissipation @ T = 25_C  
2.0  
0.016  
W
A
Derate above 25_C  
W/_C  
ORDERING INFORMATION  
Operating and Storage Junction  
Temperature Range  
T , T  
–65 to  
+150  
_C  
J
stg  
†
Device  
Package  
Shipping  
THERMAL CHARACTERISTICS  
Characteristic  
MJE15032  
TO−220  
50 Units/Rail  
50 Units/Rail  
Symbol  
Max  
Unit  
MJE15032G  
TO−220  
(Pb−Free)  
Thermal Resistance,  
Junction−to−Case  
R
q
JC  
2.5  
_C/W  
MJE15033  
TO−220  
50 Units/Rail  
50 Units/Rail  
Thermal Resistance,  
Junction−to−Ambient  
R
q
JA  
62.5  
_C/W  
MJE15033G  
TO−220  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Preferred devices are recommended choices for future use  
and best overall value.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
June, 2005 − Rev. 3  
MJE15032/D  
123456

中文翻译

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MJE15033G 替代型号

型号 品牌 替代类型 描述 数据表
MJE15033 ONSEMI

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MJE15033 MOTOROLA

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