MJ13091

更新时间： 2024-01-21 17:37:41

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管开关局域网
页数	文件大小	规格书
2页	144K
描述
isc Silicon NPN Power Transistors

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中文翻译

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技术参数
数据手册

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MJ13091 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.64
Is Samacsys：	N	最大集电极电流 (IC)：	15 A
配置：	Single	最小直流电流增益 (hFE)：	8
JESD-609代码：	e0	最高工作温度：	200 °C
极性/信道类型：	NPN	最大功率耗散 (Abs)：	175 W
子类别：	Other Transistors	表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

MJ13091 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

MJ13090/13091

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)—MJ13090

= 450V(Min)—MJ13091

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switch-mode applications.

Typical applications:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

PARAMETER

VALUE

650

750

400

450

UNIT

MJ13090

MJ13091

MJ13090

MJ13091

V_CEV

Collector-Emitter Voltage

V_CEO(SUS)Collector-Emitter Voltage

V_EBO

I_C

I_CM

I_B

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_BM

P_C

T_J

Collector Power Dissipation@T_C=25℃

Junction Temperature

175

200

-65~200

℃

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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