Datasheet > MJ13334

MJ13334

更新时间： 2024-11-14 10:55:55

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	125K
描述
isc Silicon NPN Power Transistor

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MJ13334 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

MJ13333

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 400V(Min)

·High Switching Speed

APPLICATIONS

·Designed for high-voltage ,high-speed, power switching in

inductive circuits where fall time is critical. They are partic-

ularly suited for line operated switchmode applications.

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Motor controls

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CEV

V_CEO

V_EBO

I_C

PARAMETER

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

700

400

UNIT

Collector Current-Continuous

Collector Current-Peak

Base Current-Continuous

Base Current-Peak

I_CM

I_B

I_BM

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

175

200

-65~200

℃

T_J

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

1.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

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