Datasheet > MJ14001_05

MJ14001_05

更新时间： 2024-11-14 10:55:55

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	91K
描述
High?Current Complementary Silicon Power Transistors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MJ14001_05 数据手册

MJ14001 (PNP),

MJ14002* (NPN),

MJ14003* (PNP)

*Preferred Devices

High−Current Complementary

Silicon Power Transistors

Designed for use in high−power amplifier and switching circuit

applications.

http://onsemi.com

Features

60 AMPERE

• High Current Capability − I Continuous = 60 Amperes

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80 VOLTS, 300 WATTS

• DC Current Gain − h = 15−100 @ I = 50 Adc

• Low Collector−Emitter Saturation Voltage −V

= 2.5 Vdc (Max)

CE(sat)

@ I = 50 Adc

• Pb−Free Packages are Available*

MARKING

DIAGRAM

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Collector−Emitter Voltage

MJ14001

MJ14002/03

Vdc

CEO

CBO

EBO

Collector−Base Voltage

Emitter−Base Voltage

MJ14001

MJ14002/03

Vdc

MJ1400xG

AYYWW

MEX

5.0

Vdc

Adc

Collector Current − Continuous

Base Current − Continuous

Emitter Current − Continuous

TO−204 (TO−3)

CASE 197A

STYLE 1

Total Power Dissipation @ T = 25°C

300

1.71

W/°C

Derate Above 25°C

MJ1400x = Device Code

xx = 1, 2, or 3

Operating and Storage Junction

Temperature Range

T , T

−ꢀ65 to +200

°C

stg

MEX

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

360

330

ORDERING INFORMATION

Device

Package

Shipping

MJ14001

TO−3

100 Units/Tray

270

210

150

MJ14001G

TO−3

(Pb−Free)

MJ14002

TO−3

100 Units/Tray

MJ14002G

TO−3

(Pb−Free)

MJ14003

TO−3

100 Units/Tray

MJ14003G

TO−3

(Pb−Free)

120

160

200

240

T , CASE TEMPERATURE (°C)

Figure 1. Power Derating

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting

Techniques Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 6

MJ14001/D

12 3 4 5

中文翻译

下载PDF

与MJ14001_05相关器件

型号	品牌	获取价格	描述	数据表
MJ14001G	ONSEMI	获取价格	High?Current Complementary Silicon Power Transistors
MJ14002	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSITORS
MJ14002	MOTOROLA	获取价格	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS
MJ14002	SEME-LAB	获取价格	MJ14002
MJ14002G	ONSEMI	获取价格	High?Current Complementary Silicon Power Transistors
MJ14003	MOTOROLA	获取价格	60 AMPERES COMPLEMENTARY SILICON POWER TRANSITORS 60-80 VOLTS 300 WATTS
MJ14003	ONSEMI	获取价格	COMPLEMENTARY SILICON POWER TRANSITORS
MJ14003G	ONSEMI	获取价格	High?Current Complementary Silicon Power Transistors
MJ1400FE-R52	OHMITE	获取价格	RES 140 OHM 1/8W 1% AXIAL
MJ1401FE-R52	OHMITE	获取价格	RES 1.4K OHM 1/8W 1% AXIAL

与MJ14001_05相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

5
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

2
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

29
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

12

产品中心

服务支持

精选活动

关于我们

帮助中心

MJ14001_05

MJ14001_05 数据手册

与MJ14001_05相关器件

与MJ14001_05相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MJ14001_05

MJ14001_05 数据手册

与MJ14001_05相关器件

与MJ14001_05相关文章

您还可以找

您在本页遇到什么问题？