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MJ14003 PDF预览

MJ14003

更新时间: 2024-11-13 22:33:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管局域网
页数 文件大小 规格书
6页 244K
描述
COMPLEMENTARY SILICON POWER TRANSITORS

MJ14003 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-3包装说明:CASE 197A-05, TO-3, TO-204, 2 PIN
针数:2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.28
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):60 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):5
JEDEC-95代码:TO-204AAJESD-30 代码:O-MBFM-P2
JESD-609代码:e0元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:METAL封装形状:ROUND
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):240
极性/信道类型:PNP最大功率耗散 (Abs):300 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:PIN/PEG端子位置:BOTTOM
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

MJ14003 数据手册

 浏览型号MJ14003的Datasheet PDF文件第2页浏览型号MJ14003的Datasheet PDF文件第3页浏览型号MJ14003的Datasheet PDF文件第4页浏览型号MJ14003的Datasheet PDF文件第5页浏览型号MJ14003的Datasheet PDF文件第6页 
Order this document  
by MJ14001/D  
SEMICONDUCTOR TECHNICAL DATA  
. . . designed for use in high–power amplifier and switching circuit applications,  
High Current Capability — I Continuous = 60 Amperes  
C
DC Current Gain — h  
FE  
= 15100 @ I = 50 Adc  
C
*Motorola Preferred Device  
Low Collector–Emitter Saturation Voltage —  
= 2.5 Vdc (Max) @ I = 50 Adc  
V
60 AMPERES  
COMPLEMENTARY  
SILICON  
POWER TRANSITORS  
6080 VOLTS  
CE(sat)  
C
MAXIMUM RATINGS  
Rating  
MJ14002  
MJ14003  
Symbol  
Unit  
MJ14001  
300 WATTS  
Collector–Emitter Voltage  
Collector Base Voltage  
V
V
V
60  
60  
80  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
CEO  
CBO  
EBO  
Emitter–Base Voltage  
5
Collector Current — Continuous  
Base Current — Continuous  
Emitter Current — Continuous  
I
C
60  
15  
75  
I
B
E
I
Total Power Dissipation @ T = 25 C  
C
Derate above 25 C  
P
D
300  
17  
Watts  
W/ C  
CASE 197A–05  
TO–204AE (TO–3)  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to +200  
C
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance, Junction to Case  
R
0.584  
C/W  
θJC  
360  
330  
270  
210  
150  
90  
30  
0
0
40  
80  
120  
160  
C)  
200  
240  
T
, CASE TEMPERATURE (  
°
C
Figure 1. Power Derating  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 2  
Motorola, Inc. 1995

MJ14003 替代型号

型号 品牌 替代类型 描述 数据表
MJ14003G ONSEMI

类似代替

High?Current Complementary Silicon Power Transistors
2N5686G ONSEMI

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High-Current Complementary Silicon Power Transistors
JANTX2N5686 MICROSEMI

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NPN POWER SILICON TRANSISTOR

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