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MJ15001 PDF预览

MJ15001

更新时间: 2024-11-14 10:55:55
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管
页数 文件大小 规格书
3页 39K
描述
Silicon NPN Power Transistors

MJ15001 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.55
Is Samacsys:NBase Number Matches:1

MJ15001 数据手册

 浏览型号MJ15001的Datasheet PDF文件第2页浏览型号MJ15001的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
MJ15001  
DESCRIPTION  
·With TO-3 package  
·Complement to type MJ15002  
·Wide area of safe operation  
APPLICATIONS  
·For high power audio,disk head positioners  
and other linear applications  
PINNING(see Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Collector  
Fig.1 simplified outline (TO-3) and symbol  
3
Absolute maximum ratings(Ta=)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
Open emitter  
VALUE  
140  
140  
5
UNIT  
V
Open base  
V
Open collector  
V
15  
A
IB  
Base current  
5
A
IE  
Emitter current  
-20  
A
PD  
Total power dissipation  
Junction temperature  
Storage temperature  
TC=25  
200  
200  
-65~200  
W
Tj  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Rth j-c  
Thermal resistance junction to case  
0.875  
/W  

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