Datasheet > MJ15011G

MJ15011G

更新时间： 2024-11-15 04:15:31

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
4页	62K
描述
Complementary Silicon Power Transistors

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中文翻译

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数据手册
替代型号

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MJ15011G 数据手册

MJ15011ꢀ(NPN),

MJ15012ꢀ(PNP)

Preferred Devices

Complementary Silicon

Power Transistors

The MJ15011 and MJ15012 are PowerBase power transistors

designed for high−power audio, disk head positioners, and other linear

applications. These devices can also be used in power switching

circuits such as relay or solenoid drivers, dc−to−dc converters or

inverters.

http://onsemi.com

10 AMPERE

COMPLEMENTARY

POWER TRANSISTORS

250 VOLTS

• High Safe Operating Area (100% Tested)

1.2 A @ 100 V

• Completely Characterized for Linear Operation

• High DC Current Gain and Low Saturation Voltage

200 WATTS

= 20 (Min) @ 2 A, 2 V

CE(sat)

= 2.5 V (Max) @ I = 4 A, I = 0.4 A

C B

• For Low Distortion Complementary Designs

• Pb−Free Packages are Available*

TO−204AA (TO−3)

CASE 1−07

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Emitter−Base Voltage

Symbol

Value

250

Unit

Vdc

Adc

STYLE 1

CEO

MARKING DIAGRAM

CEX

Collector Current− Continuous

− Peak (Note 1)

MJ1501xG

AYYWW

MEX

Base Current − Continuous

− Peak (Note 1)

Adc

Emitter Current− Continuous

− Peak (Note 1)

MJ1501x = Device Code

x = 1 or 2

Total Power Dissipation @ T = 25_C

200

1.14

Watts

W/_C

Derate above 25_C

MEX

= Pb−Free Package

= Location Code

= Year

= Work Week

= Country of Orgin

Operating and Storage Junction

Temperature Range

T , T

–65 to

+200

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

0.875

265

Unit

_C/W

ORDERING INFORMATION

Thermal Resistance, Junction to Case

Maximum Lead Temperature for

Soldering Purposes

Device

Package

Shipping

MJ15011

TO−204AA

100 Units/Tray

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MJ15011G

TO−204AA

(Pb−Free)

MJ15012

TO−204AA

100 Units/Tray

1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%.

MJ15012G

TO−204AA

(Pb−Free)

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

December, 2005 − Rev. 3

MJ15011/D

12 3 4

中文翻译

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MJ15011G 替代型号

型号	品牌	替代类型	描述	数据表
MJ15011	ONSEMI	完全替代	COMPLEMENTARY POWER TRANSISTORS
MJ15011	MOTOROLA	功能相似	10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS

与MJ15011G相关器件

型号	品牌	获取价格	描述	数据表
MJ15012	ISC	获取价格	Silicon PNP Power Transistor
MJ15012	MOTOROLA	获取价格	10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200 WATTS
MJ15012	ONSEMI	获取价格	COMPLEMENTARY POWER TRANSISTORS
MJ15012	NJSEMI	获取价格	Trans GP BJT PNP 250V 10A 3-Pin(2+Tab) TO-204 Tray
MJ15012G	ONSEMI	获取价格	Complementary Silicon Power Transistors
MJ15015	BOCA	获取价格	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
MJ15015	ISC	获取价格	Silicon NPN Power Transistors
MJ15015	SAVANTIC	获取价格	Silicon NPN Power Transistors
MJ15015	NJSEMI	获取价格	COMPLEMENTARY SILICON HIGH - POWER TRANSISTORS
MJ15015	Wing Shing	获取价格	Silicon Epitaxial Planar Transistor

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